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dc.contributor.author DIKUSAR, A. I.
dc.contributor.author BRUK, L. I.
dc.contributor.author MONAICO, E. V.
dc.contributor.author SHERBAN, D. A.
dc.contributor.author SIMASHKEVICH, A. V.
dc.contributor.author TIGINYANU, I. M.
dc.date.accessioned 2020-09-17T12:46:23Z
dc.date.available 2020-09-17T12:46:23Z
dc.date.issued 2008
dc.identifier.citation DIKUSAR, A. I., BRUK, L. I., MONAICO, E. V. et al. Photoelectric structures based on nanoporous p-InP. In: Surface Engineering and Applied Electrochemistry, 2008, V. 44, pp.1–5. en_US
dc.identifier.uri https://doi.org/10.3103/S1068375508010018
dc.identifier.uri http://repository.utm.md/handle/5014/9552
dc.description Access full text - https://doi.org/10.3103/S1068375508010018 en_US
dc.description.abstract The possibility of nanostructuring of surfaces of indium phosphide with hole conduction is confirmed. The technique of manufacturing and research of SnO2/InP heterostructures with a nanoporous surface at the interface is developed. It is shown that the investigated structure can form a basis for working out photovoltaic devices with an enlarged active surface. en_US
dc.language.iso en en_US
dc.publisher Springer Nature Switzerland en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject indium phosphide en_US
dc.subject heterostructures en_US
dc.subject nanoporous surfaces en_US
dc.subject photovoltaic devices en_US
dc.title Photoelectric structures based on nanoporous p-InP en_US
dc.type Article en_US


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