Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes

LUPAN, Oleg; PAUPORTÉ, Thierry; VIANA, Bruno

dc.contributor.author	LUPAN, Oleg
dc.contributor.author	PAUPORTÉ, Thierry
dc.contributor.author	VIANA, Bruno
dc.date.accessioned	2020-06-01T08:39:34Z
dc.date.available	2020-06-01T08:39:34Z
dc.date.issued	2010
dc.identifier.citation	LUPAN, Oleg, PAUPORTÉ, Thierry, VIANA, Bruno. Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes. In: Advanced Materials, 2010, V. 22, pp. 3298-3302. ISSN 1521-4095.	en_US
dc.identifier.issn	1521-4095
dc.identifier.uri	https://doi.org/10.1002/adma.201000611
dc.identifier.uri	http://repository.utm.md/handle/5014/8527
dc.description	Access full text - https://doi.org/10.1002/adma.201000611	en_US
dc.description.abstract	UV LEDs : The fabrication of an ITO/ZnO-nanowires/p-GaN/In-Ga LED structure is reported with an active emitting layer made of high-quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 °C). A narrow ultra-violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V.	en_US
dc.language.iso	ro	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	light-emitting diodes	en_US
dc.subject	diodes	en_US
dc.subject	zinc oxide	en_US
dc.subject	inorganic nanowires	en_US
dc.subject	electroluminescence	en_US
dc.title	Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes	en_US
dc.type	Article	en_US