dc.contributor.author | GAGARA, L. | |
dc.contributor.author | GASHIN, P. | |
dc.contributor.author | REVENCO, M. | |
dc.date.accessioned | 2020-05-29T19:57:04Z | |
dc.date.available | 2020-05-29T19:57:04Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | GAGARA, L., GASHIN, P., REVENCO, M. Application of CdS Insulator Nano Layers in SIS Structures Based on pSi. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 87. ISBN 978-9975-72-392-3. | en_US |
dc.identifier.isbn | 978-9975-72-392-3 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/8471 | |
dc.description | Abstract | en_US |
dc.description.abstract | It was investigated the works of SIS structures pSi-CdS-ITO in which has been found experimentaly the effect multiplication process. For created this SIS structures was used thin films CdS with ρ=109 -1010 Ω.cm and transparency 80-85% deposited by method spray pyrolysis .The layer thickness was controlled by the deposition time and consta 15-180 Aº. ITO layers was deposied on CdS layer with thicknesses 70-100 nm method spray pyrolysis too. Ohmic contacts was fored : Ni to pSi and In to ITO. At the illumination by laser light λ=0,63 µm and the flux of N=6,3.1015 s -1 cm-2 the amplification coefficient M=10-12 , the fotocurrent density was 4-6 mA/cm2. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Tehnica UTM | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thin films | en_US |
dc.subject | spray pyrolysis method | en_US |
dc.subject | Ohmic contacts | en_US |
dc.subject | insulator nano layers | en_US |
dc.title | Application of CdS Insulator Nano Layers in SIS Structures Based on pSi | en_US |
dc.type | Article | en_US |
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