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Application of CdS Insulator Nano Layers in SIS Structures Based on pSi

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dc.contributor.author GAGARA, L.
dc.contributor.author GASHIN, P.
dc.contributor.author REVENCO, M.
dc.date.accessioned 2020-05-29T19:57:04Z
dc.date.available 2020-05-29T19:57:04Z
dc.date.issued 2019
dc.identifier.citation GAGARA, L., GASHIN, P., REVENCO, M. Application of CdS Insulator Nano Layers in SIS Structures Based on pSi. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 87. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8471
dc.description Abstract en_US
dc.description.abstract It was investigated the works of SIS structures pSi-CdS-ITO in which has been found experimentaly the effect multiplication process. For created this SIS structures was used thin films CdS with ρ=109 -1010 Ω.cm and transparency 80-85% deposited by method spray pyrolysis .The layer thickness was controlled by the deposition time and consta 15-180 Aº. ITO layers was deposied on CdS layer with thicknesses 70-100 nm method spray pyrolysis too. Ohmic contacts was fored : Ni to pSi and In to ITO. At the illumination by laser light λ=0,63 µm and the flux of N=6,3.1015 s -1 cm-2 the amplification coefficient M=10-12 , the fotocurrent density was 4-6 mA/cm2. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thin films en_US
dc.subject spray pyrolysis method en_US
dc.subject Ohmic contacts en_US
dc.subject insulator nano layers en_US
dc.title Application of CdS Insulator Nano Layers in SIS Structures Based on pSi en_US
dc.type Article en_US


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