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dc.contributor.author DOROGAN, A. V.
dc.contributor.author BERIL, S. I.
dc.contributor.author STAMOV, I. G.
dc.contributor.author SYRBU, N. N.
dc.date.accessioned 2020-05-28T17:18:45Z
dc.date.available 2020-05-28T17:18:45Z
dc.date.issued 2019
dc.identifier.citation DOROGAN, A. V., BERIL, S. I., STAMOV, I. G., SYRBU, N. N. Ме-ZnP2 Diodes Sensible to Optical Gyration. In: ICNMBE-2019: International conference on Nanotechnologies and Biomedical Engineering: proc. of the 4rd intern. conf., Sept. 18-21, 2019: Program and Abstract Book. Chişinău, 2019, p. 80. ISBN 978-9975-72-392-3. en_US
dc.identifier.isbn 978-9975-72-392-3
dc.identifier.uri http://repository.utm.md/handle/5014/8436
dc.identifier.uri https://doi.org/10.1007/978-3-030-31866-6_34
dc.description Access full text - https://doi.org/10.1007/978-3-030-31866-6_34 en_US
dc.description.abstract Spatial dispersion in ZnP2-D 4 8 has been studied. The spectral dependences of the refractive index nc(Eǁc, kǁa), na(Eǁa, kǁc) and nb(Eǁb, kǁc) had been determined. It was shown that the dispersion is positive nc(Eǁc, kǁa), na(Eǁa, kǁc) > nb(Eǁb, kǁc) in λ > λ0 region, the dispersion is negative nc(Eǁc, kǁa) at λ < λ0, and Δn = nc – nb= 0 at λ = λ0. The LIV characteristics of Me-ZnP2-D 4 8 diodes had been studied at different temperatures, the temperature dependences of the “imperfection” factor δ for different Schottky barriers. Capacitance voltage characteristics of Me-ZnP2-D 4 8 photodiodes obtained by electrochemical deposition of metal and by thermo-chemical spraying in vacuum had been studied. en_US
dc.language.iso en en_US
dc.publisher Tehnica UTM en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject schottky diodes en_US
dc.subject optical gyration en_US
dc.subject anisotropy en_US
dc.title Ме-ZnP2 Diodes Sensible to Optical Gyration en_US
dc.type Article en_US


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