Ме-ZnP2 Diodes Sensible to Optical Gyration

Abstract

Spatial dispersion in ZnP2-D 4 8 has been studied. The spectral dependences of the refractive index nc(Eǁc, kǁa), na(Eǁa, kǁc) and nb(Eǁb, kǁc) had been determined. It was shown that the dispersion is positive nc(Eǁc, kǁa), na(Eǁa, kǁc) > nb(Eǁb, kǁc) in λ > λ0 region, the dispersion is negative nc(Eǁc, kǁa) at λ < λ0, and Δn = nc – nb= 0 at λ = λ0. The LIV characteristics of Me-ZnP2-D 4 8 diodes had been studied at different temperatures, the temperature dependences of the “imperfection” factor δ for different Schottky barriers. Capacitance voltage characteristics of Me-ZnP2-D 4 8 photodiodes obtained by electrochemical deposition of metal and by thermo-chemical spraying in vacuum had been studied.