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Browsing Articole din publicaţii internaţionale by Subject "Raman spectra"

Browsing Articole din publicaţii internaţionale by Subject "Raman spectra"

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  • SYRBU, N. N.; KRASOVSKY, V. T. (Elservier, 1995)
    Raman spectra of Tl3AsS4 and Tl3PS4 have been investigated at 300 and 77 K. The vibrational modes Ag, B1g, B2g and B3g are determined. The vibrational mode splittings caused by Davydov resonances are determined. Infrared ...
  • SYRBU, N. N.; RADAUTSAN, S. I.; CRETU, R. V.; TEZLEVAN, V. E.; MOLDOVEANU, N. A. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1996)
    Raman and infrared reflectivity spectra of CdInGaS4, CdIn2G4, HgInGaS4, and CdIn2S2Se2 crystals have been investigated. The fiindamental phonon parameters, the limiting dielectric constants ϵ0 and ϵ∞ and the reflectivity ...
  • LUPAN, O.; CHOW, L.; CHAI, G.; SCHULTE, A.; PARK, S.; HEINRICH, H.; SONTEA, V.; TROFIM, V.; RAILEAN, S. (Institute of Electrical and Electronics Engineerings, IEEE, 2008)
    A facile aqueous solution process to fabricate tin oxide nanoarchitectures was successfully developed. The influence of precursors on the morphology of SnO2 is studied. Tin oxide nanobelts/nanoribbons were characterized ...
  • SYRBU, N. N.; CRETU, R. V.; CEBOTARI, V. Z.; MUSHINSKII, V. P. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1996)
    The Raman scattering and IR reflectivity have been investigated for different crystal configurations. The contours of reflectivity spectra have been calculated. The angle dependence of polar vibrational modes in both ...
  • TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)
    It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...
  • IOVU, M. S.; CULEAC, I. P.; KOUDELKA, Ladislav; VOYNAROVYCH, Ivan; VLCEK, Miroslav (American Scientific Publishers, 2014)
    Raman spectra for optical fiber samples prepared from As-based chalcogenide glass composition (As50S50, As40S60, As25S75, (As40S60)0.95:(As40Se60)0.05 and (As40S60)0.95:(Sb40S60)0.05 are investigated. The primary maximum ...
  • SHISHIYANU, S.; URSAKI, V. V.; GHIMPU, L.; LUPAN, O.; TIGINYANU, I.; SHISHIYANU, T. (Institute of Electrical and Electronics Engineerings, IEEE, 2011)
    A rapid photothermal processing (RPP) technique has been developed to functionalize a new generation of nanostructured zinc oxide film materials. An environment-friendly chemical process was used to obtain nanostructures. ...
  • TROFIM, V.; CRETU, V.; LUPAN, O.; ENACHI, M.; MONAICO, E.; SYRBU, N.; TIGINYANU, I.; CHOW, L. (Institute of Electrical and Electronics Engineerings, IEEE, 2013)
    Micro - and nanostructures of molybdenum trioxide (MoO3) have been investigated intensively for sensorial and electrochromic systems. MoO3 nanostructures were grown by a rapid thermal oxidation of molybdenum at 1000 °C in ...
  • LUPAN, O.; CHOW, L.; CHAI, G.; HEINRICH, H.; PARK, S.; SCHULTE, A. (ELSEVIER, 2009)
    We have developed a simple solution process to synthesize tin oxide nanorods. The influence of precursors and the reaction temperature on the morphology of SnO2 is investigated. SnO2 nanorods are characterized by X-ray ...

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