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Browsing Articole din publicaţii internaţionale by Subject "Raman scattering"

Browsing Articole din publicaţii internaţionale by Subject "Raman scattering"

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  • AB2X4 Compounds with Other Types of Structures at High Pressures 
    URSAKI, V. V.; TIGINYANU, I. M. (Springer-Verlag Berlin Heidelberg, 2014)
    Phase transitions in AIIBIII2XVI4 compounds with initial structures different from cubic spinel or tetragonal chalcopyrites and stannites are analyzed in this chapter on the instance of layered AIIInGaS4 crystals with Cd, ...
  • Bound exciton in CuGaS2 
    SYRBU, N. N.; NEMERENCO, L. L.; BEJAN, V. N.; TEZLEVAN, V. E. (Elservier, 2007)
    In CuGaS2 crystals absorption and luminescence spectra at the temperature 9K at excitation by different wavelengths of Ar laser are investigated. A series of lines available in luminescence and absorption spectra is found. ...
  • Characterization of core/shell structures based on CdTe and GaAs nanocrystalline layers deposited on SnO2 microwires 
    GHIMPU, L.; URSAKI, V. V.; PANTAZI, A.; MESTERCA, R.; BRÂNCOVEANU, O.; SHREE, Sindu; ADELUNG, R.; TIGINYANU, I. M.; ENACHESCU, M. (ELSEVIER, 2018)
    We report the fabrication and characterization of SnO2/CdTe and SnO2/GaAs core/shell microstructures. CdTe or GaAs shell layers were deposited by radio-frequency (RF) magnetron sputtering on core SnO2 microwires synthesized ...
  • Design of titania nanotube structures by focused laser beam direct writing 
    ENACHI, Mihai; STEVENS-KALCEFF, Marion A.; SARUA, Andrei; URSAKI, Veaceslav; TIGINYANU, Ion (AIP Publishing LLC, 2013)
    In this work, we report on electrochemical fabrication of titania films consisting of nanotubes (NTs) and their treatment by focused laser beam. The results of sample characterization by optical and scanning electron ...
  • Excitonic spectra in HgGa2Se4 crystals 
    SYRBU, N. N.; ZALAMAI, V. V. (Elservier, 2018)
    Ground and excited states of four excitonic series (A, B, C and D) were discovered in HgGa2Se4 crystals at 10 K. Parameters of excitons and bands were determined. An effective mass of electrons mc is equal to 0.26m0 and ...
  • High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 
    VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
  • Infrared lattice vibration spectra of monoclinic ZnP2 
    SOBOTTA, H.; NEUMANN, H.; SYRBU, N. N.; RIEDE, V. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1983)
    The lattice vibrational properties of ZnP2 which is known to crystallize in a monoclinic and tetragonal modification with space groups P21/c and one of the enantiomorphs P41212 or P43212 respectively /1/, have been studied ...
  • Infrared lattice vibration spectra of tetragonal ZnP2 
    SOBOTTA, H.; NEUMANN, H.; RIEDE, V.; SYRBU, N. N. (Elservier, 1983)
    Infrared reflectivity spectra of tetragonal ZnP2 are measured in the frequency range from 40 to 600 cm-1 for both polarization directions E ⊥ c and E ‖ c. The parameters of 9 E modes and 4 A2 modes are determined by a ...
  • Lattice dynamics study of HgGa2Se4 at high pressures 
    VILAPLANA, R.; GOMIS, O.; MANJÓN, F. J.; ORTIZ, H.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; URSAKI, V. V.; TIGINYANU, I. M. (American Chemical Society, 2013)
    We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high ...
  • Light Absorption and Hyper-Raman Scattering by Many-Electron Complexes in Quantum Well Structures 
    BOBRYSHEVA, A. I.; RUSSU, S. S.; ZALOI, V. A. (John Wiley & Sons, Inc., 1988)
    It is shown that in GaAs/AlxGa1-xAs multiple-quantum well structures bihole formation is possible. Also the main features of biexciton hyper-Raman scattering are established.
  • Micro-Raman study of columnar GaAs nanostructures 
    PRUNICI, Pavel; IRMER, Gert; MONECKE, Jochen; SIRBU, Lilian; TIGINYANU, Ion (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Micro-Raman scattering spectra of bulk and porous GaAs and of individual nanocolumns were studied. The GaAs nanocolumns have radii of 50–100 nm and lengths between 5 and 25 µm. The experimental data are compared with the ...
  • Multiphonon resonant Raman scattering in ZnO crystals and nanostructured layers 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; RUSU, E. V.; EMELCHENKO, G. A.; MASALOV, V. M.; SAMAROV, E. N. (American Physical Society, 2004)
    Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk ZnO crystals and layers, including nanostructured and highly conductive films, excited by 351.1 and 363.8 nm laser lines in the temperature ...
  • Multiple-phonon resonant Raman scattering in CuGaxIn1−xS2 single crystals 
    SYRBU, N. N.; NEMERENCO, L. L.; DOROGAN, A. V.; TEZLEVAN, V. E.; ARAMA, E. (Elservier, 2009)
    In this work it is researched the Raman scattering spectra of CuGaхIn1−xS2 solid compounds for x=1.0,0.9 and 0.8 at 10–60K. LO-phonons, 2LO-phonons etc can be observed while going far from the excitation energy (6 phonons ...
  • Non-Linear Raman Scattering in I-III2-VI4 Compounds 
    FOMIN, V. M.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    The paper presents an experimental substantiation of the theory (based on the optical vibration anharmonism) of non-linear Raman scattering (RS) in defective II-III2-VI4 compounds. In the transparency region of those ...
  • Photoluminescence and resonant Raman scattering in highly conductive ZnO layers 
    ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L. (American Institute of Physics, 2004)
    Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound ...
  • Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth 
    TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P. (IEEE, 1996)
    The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of ...
  • Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion 
    PHAN, The Long; VINCENT, Roger; CHERNS, David; NGHIA, Nguyen Xuan; URSAKI, V. V. (IOP Publishing, 2008)
    We have investigated normal and resonant Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion. Experimental results show that the normal Raman spectra consist of the conventional ...
  • Raman scattering in right angle configuration on Cu2ZnSiSe4 single crystals 
    GUC, M.; LEVCENKO, S.; ZALAMAI, V.; ARUSHANOV, E.; SYRBU, N. N. (Elservier, 2017)
    Polarized Raman scattering and resonance Raman scattering spectra of Cu2ZnSiSe4 crystals measured at temperature 300 and 10 K were investigated. Nine vibrational modes of A2 symmetry, seven modes of B2 symmetry and nine ...
  • Raman scattering investigation of MnxFe1−xIn2S4 solid solutions 
    GUC, M.; URSAKI, V. V.; BODNAR, I. V.; LOZHKIN, D. V.; ARUSHANOV, E.; IZQUIERDO-ROCA, V.; PÉREZ RODRÍGUEZ, A. (ELSEVIER, 2012)
    Spinel-type MnxFe1−xIn2S4 solid solutions grown by the planar melt crystallization method (the horizontal version of the Bridgman method) are investigated by means of energy dispersive X-ray analysis and Raman scattering ...
  • Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals 
    URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...

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