DIKUSAR, A.; SIMASHKEVICH, A.; SHERBAN, D.; MONAICO, E.; BRUK, L.; USATII, Yu.; TIGINYANU, I.
(Institutul de Fizică Aplicată, AŞM, 2006)
The peculiarities of the deposition process in dependence of the porous layer thickness were investigated. The porous layers of III-V semiconductor n-InP have been obtained by the anodic dissolution in 5% HCl. The diameter ...