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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • AB2X4 Compounds with Other Types of Structures at High Pressures 
    URSAKI, V. V.; TIGINYANU, I. M. (Springer-Verlag Berlin Heidelberg, 2014)
    Phase transitions in AIIBIII2XVI4 compounds with initial structures different from cubic spinel or tetragonal chalcopyrites and stannites are analyzed in this chapter on the instance of layered AIIInGaS4 crystals with Cd, ...
  • Anomalous retroreflection from nanoporous materials as backscattering by `dark' and `bright' modes 
    SERGENTU, V. V.; PRISLOPSKI, S. Ya.; MONAICO, E. V.; URSAKI, V. V.; GAPONENKO, S. V.; TIGINYANU, I. M. (IOP Publishing, 2016)
    In this paper the mechanisms of previously experimentally observed anomalous retroreflection in a strongly absorbing nanostructured medium are explained by using ‘dark’ and ‘bright’ modes. The observed regularities are ...
  • Anomalous retroreflection from strongly absorbing nanoporous semiconductors 
    PRISLOPSKI, S. Ya.; NAUMENKO, E. K.; TIGINYANU, I. M.; GHIMPU, L.; MONAICO, E.; SIRBU, L.; GAPONENKO, S. V. (Optical Society of America, 2011)
    Pronounced retroreflection behavior is reported for a fishnet nanoporous strongly absorbing semiconductor material. Retroreflection features a half-cone about 0.35 rad along with diffusive specular reflection for all angles ...
  • Application of surface charge lithography to nanostructuring of GaN epilayers 
    POPA, V. Iu.; VOLCIUC, O.; TIGINYANU, I. M.; SARUA, A.; HEARD, P. (Springer Nature Switzerland, 2008)
    It is shown that treatment of GaN epilayers by a low energy low dose focused ion beam with subsequent photoelectrochemical etching represent an efficient tool for GaN nanostructuring. Direct “writing” of a surface negative ...
  • Artificial birefringence introduced by porosity in GaP 
    URSAKI, V. V.; SYRBU, N. N.; ALBU, S.; ZALAMAI, V. V.; TIGINYANU, I. M.; BOYD, Robert W. (IOP Publishing, 2005)
    Porosity-induced birefringence in a GaP membrane is studied using a method based on the analysis of beats in unpolarized and polarized transmittance spectra as well as in angular dependence of optical spectra. Birefringence ...
  • The band structure of birefractive CdGa2S4 crystals 
    STAMOV, I. G.; SYRBU, N. N.; PARVAN, V. I.; ZALAMAI, V. V.; TIGINYANU, I. M. (Elservier, 2013)
    In this paper, we report on the spectral dependence of Δn=no−ne for CdGa2S4 single crystals for shorter and longer wavelengths than the isotropic wavelength λ0=485.7nm (300K). It was established that Δn is positive at λ>λ0 ...
  • Birefringence of CuGa2S4 crystals 
    SYRBU, N.; DOROGAN, A.; URSAKI, V.; STAMOV, I.; TIGINYANU, I. M. (The Electrochemical Society, 2011)
    Investigation of the spectral characteristics as a function of the crystal thickness demonstrates that one can create filters using thin crystals for selecting several spectral lines. The wavelength of these lines is ...
  • Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP 
    SÁNCHEZ, B.; MÉNDEZ, B.; PIQUERAS, J.; SIRBU, L.; TIGINYANU, I. M.; URSAKI, V. V. (Springer Nature Switzerland, 2008)
    Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial ...
  • Cathodoluminescence characterization of suspended GaN nanomembranes 
    STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; POPA, V.; BRANISTE, T.; BRENNER, P. (AIP Publishing LLC, 2013)
    Continuous suspended ~15 nm thick gallium nitride (GaN) nano-membranes have been investigated using cathodoluminescence microanalysis. The GaN nanomembranes are fabricated by focused ion beam (FIB) pre-treatment of GaN ...
  • Cathodoluminescence microanalysis of porous GaP and InP structures 
    TIGINYANU, I. M.; LANGA, S.; SIRBU, L.; MONAICO, E.; STEVENS-KALCEFF, M. A.; FÖLL, H. (EDP Sciences, 2004)
    Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP and n-InP substrates in aqueous solutions of sulfuric and ...
  • Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography 
    DÍAZ-GUERRA, C.; PIQUERAS, J.; VOLCIUC, O.; POPA, V.; TIGINYANU, I. M. (American Institute of Physics, 2006)
    Cathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic ...
  • Characterization of core/shell structures based on CdTe and GaAs nanocrystalline layers deposited on SnO2 microwires 
    GHIMPU, L.; URSAKI, V. V.; PANTAZI, A.; MESTERCA, R.; BRÂNCOVEANU, O.; SHREE, Sindu; ADELUNG, R.; TIGINYANU, I. M.; ENACHESCU, M. (ELSEVIER, 2018)
    We report the fabrication and characterization of SnO2/CdTe and SnO2/GaAs core/shell microstructures. CdTe or GaAs shell layers were deposited by radio-frequency (RF) magnetron sputtering on core SnO2 microwires synthesized ...
  • Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy 
    SARUA, A.; TIGINYANU, I. M.; URSAKI, V. V.; IRMER, G.; MONECKE, J.; HARTNAGEL, H. L. (ELSEVIER, 1999)
    Free-standing porous GaP membranes were fabricated by anodic etching of (111)-oriented crystalline substrates in H2SO4 aqueous solution. The formation of a column-shaped porous structure with average structure dimension ...
  • A comparative study of guided modes and random lasing in ZnO nanorod structures 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; FALLERT, J.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N.; GRUZINTSEV, A. N.; RUSU, E. V.; TIGINYANU, I. M. (IOP Publishing, 2009)
    Hexagonal and arrow-headed ZnO nanorod structures have been grown by low pressure chemical vapour deposition (CVD) and atmospheric pressure metal-organic CVD. The technology ensures a high optical quality of the produced ...
  • Comparative study of hydrothermal treatment and thermal annealing effects on the properties of electrodeposited micro-columnar ZnO thin films 
    LUPAN, O.; PAUPORTÉ, T.; TIGINYANU, I. M.; URSAKI, V. V.; SONTEA, V.; ONO, L. K.; ROLDAN CUENYA, B.; CHOW, L. (ELSEVIER, 2011)
    We report a comparison of the role played by different sample treatments, namely, a low-temperature hydrothermal treatment by hot H2O vapor in an autoclave versus thermal annealing in air on the properties of ZnO films ...
  • Comparative study of the ZnO and Zn1−xCdxO nanorod emitters hydrothermally synthesized and electrodeposited on p-GaN 
    LUPAN, O.; PAUPORTÉ, T.; CHOW, L.; CHAI, G.; VIANA, B.; URSAKI, V. V.; MONAICO, E.; TIGINYANU, I. M. (ELSEVIER, 2012)
    Hydrothermal synthesis and electrodeposition are low-temperature and cost-effective growth techniques of high quality nanostructured active materials for opto-electronic devices. Here we report a hydrothermal seed layer-free ...
  • A comparison of pores in silicon and pores in III–V compound materials 
    CHRISTOPHERSEN, M.; LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    This paper compares the morphologies of porous silicon and porous III–V compounds and discusses their growth mechanisms. Looking into the fine structure of pores, in silicon (meso)pores with intercalating octahedra are ...
  • Conductivity of nanoporous InP membranes investigated using terahertz spectroscopy 
    MERCHANT, S. K. E.; LLOYD-HUGHES, J.; SIRBU, L.; TIGINYANU, I. M.; PARKINSON, P.; HERZ, L. M.; JOHNSTON, M. B. (IOP Publishing, 2008)
    We have investigated the terahertz conductivity of extrinsic and photoexcited electrons in nanoporous indium phosphide (InP) at different pore densities and orientations. The form of electronic transport in the film was ...
  • The contribution of exciton-phonon interaction and action disorder to near-band-edge extrinsic absorption in II-III2-VI4 compounds 
    GEORGOBIANI, A. N.; URSAKI, V. V.; RADAUTSAN, S. I.; TIGINYANU, I. M. (ELSEVIER, 1985)
    Results of a study of near-band-edge absorption in both initial and annealed CdGa2S4 and CdIn2S4 single crystals at different temperatures are presented. Exciton-phonon interaction and cation disorder are shown to determine ...
  • Control of HVPE grown GaN nanostruturing by anodization 
    MONAICO, Ed.; MOISE, C.; MIHAI, G.; ENACHESCU, M.; NIELSCH, K.; URSAKI, V. V.; TIGINYANU, I. M. (Institutul de Fizică Aplicată, AŞM, 2018)
    In this paper, results of a systematic study of morphologies obtained with anodization in HNO3, HCl, and NaCl solutions are presented. It is shown that complex pyramidal structures composed by regions with modulated porosity ...

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