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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • From photonic crystals to metamaterials: new challenges 
    TIGINYANU, I. M. (Institutul de Fizică Aplicată, AŞM, 2006)
    Photonic crystals represent periodic dielectric structures designed to control the flow of electromagnetic radiation. Photonic crystals can be viewed as a subclass of a larger family of material systems called metamaterials ...
  • Fröhlich modes in gan columnar nanostructures 
    TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • Fröhlich modes in porous III-V semiconductors 
    SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
  • Fröhlich vibrational modes in porous ZnSe studied by Raman scattering and Fourier transform infrared reflectance 
    IRMER, G.; MONAICO, E.; TIGINYANU, I. M.; GÄRTNER, G.; URSAKI, V. V.; KOLIBABA, G. V.; NEDEOGLO, D. D. (IOP Publishing, 2009)
    Arrays of parallel pores with a diameter of around 60 nm have been introduced by anodic etching in ZnSe single crystals with a free electron concentration of 4 × 1017 cm−3. Porosity-induced Fröhlich vibrational modes were ...
  • GaAs nanowires obtained via electrochemical etching of bulk substrates 
    MONAICO, Ed.; MORARI, V.; URSAKI, V. V.; MONAICO, E. I.; TIGINYANU, I. M.; NIELSCH, K. (Institutul de Fizică Aplicată, AŞM, 2018)
    Technological conditions for obtaining InP nanomembranes and nanowires by means of fast anodic etching of bulk substrates have been recently elaborated. Electrochemical etching is an easy, cost-effective, and very fast ...
  • GaN Schottky multiplier diodes prepared by electroplating: a study of passivation technology 
    COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; HARTNAGEL, H. L.; DAUMILLER, I. (IOP Publishing, 2004)
    This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects ...
  • A GaN-based two-sensor array for methane detection in an ethanol environment 
    POPA, V.; TIGINYANU, I. M.; URSAKI, V. V.; VOLCIUS, O.; MORKOÇ, H. (IOP Publishing, 2006)
    We demonstrate that photoelectrochemical (PEC) etching of GaN layers in KOH or H3PO4 solutions leads to the formation of specific surface morphologies which cause the material to exhibit different sensitivities to certain ...
  • GaP template based semiconductor-metal nanocomposite 
    ALBU, Sergiu; MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V. (Institutul de Fizică Aplicată, AŞM, 2006)
    The interest in nanometer-scale materials and devices stimulated the development of alternative technologies in recent years. Metal nanowires are one of the most attractive materials because of their unique properties ...
  • Gold Electroplating as a Tool for Assessing the Conductivity of InP Nanostructures Fabricated by Anodic Etching of Crystalline Substrates 
    MONAICO, E. V.; TIGINYANU, I. M.; URSAKI, V. V.; NIELSCH, K.; BALAN, D.; PRODANA, M.; ENACHESCU, M. (The Electrochemical Society, 2017)
    Electroplating is shown to represent a simple and effective tool for assessing the conductivity of InP nanostructures fabricated by electrochemical etching of InP wafers. A mixture of nanowalls, nanowires and nanobelts was ...
  • Growth of ZnCdS single crystals and prospects of their application as nanoporous structures 
    COLIBABA, G. V.; MONAICO, E. V.; GONCEARENCO, E. P.; NEDEOGLO, D. D.; TIGINYANU, I. M.; NIELSCH, K. (IOP Publishing, 2014)
    Substrates of wide band-gap II–VI semiconductor compounds are considered feasible for the fabrication of nanoporous matrices (NM) needed for templated growth of nanowires and nanotubes of solid-state materials promising ...
  • Guided mode lasing in ZnO nanorod structures 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; FALLERT, J.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N.; GRUZINTSEV, A. N.; RUSU, E. V.; TIGINYANU, I. M. (ELSEVIER, 2009)
    Quasi-two-dimensional arrays of nearly parallel hexagonal ZnO nanorods and a three-dimensional cylindrical microstructure consisting of ZnO nanorods have been grown by low pressure chemical vapor deposition (CVD) and ...
  • Heavy noble gas (Kr, Xe) irradiated (111) InP nanoporous honeycomb membranes with enhanced ultrafast all-optical terahertz emission 
    RADHANPURA, K.; HARGREAVES, S.; LEWIS, R. A.; SIRBU, L.; TIGINYANU, I. M. (American Institute of Physics, 2010)
    Nanoporous honeycomb membranes on InP (111) surfaces emit ultrafast coherent terahertz pulses under near-infrared optical excitation. Irradiating the membranes with heavy noble gas Kr or Xe ions enhances the terahertz ...
  • HgGa2Se4 under high pressure: An optical absorption study 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; RUIZ-FUERTES, J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; BANDIELLO, E.; ERRANDONEA, D.; SEGURA, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2015)
    High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder ...
  • High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels 
    RUIZ-FUERTES, J.; ERRANDONEA, D.; MANJÓN, F. J.; MARTÍNEZ-GARCÍA, D.; SEGURA, A.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the ...
  • High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; SANTAMARÍA-PÉREZ, D.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2012)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
  • High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 
    VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
  • High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; SANTAMARÍA-PÉREZ, D.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB2X4 ordered-vacancy compounds with tetragonal defect chalcopyrite ...
  • High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4 
    ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    X-ray diffraction measurements on the sphalerite-derivatives ZnGa2Se4ZnGa2Se4 and CdGa2S4CdGa2S4 have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa2Se4ZnGa2Se4 exhibits a defect tetragonal ...
  • Highly luminescent columnar ZnO films grown directly on n-Si and p-Si substrates by low-temperature electrochemical deposition 
    LUPAN, Oleg; PAUPORTÉ, Thierry; URSAKI, V. V.; TIGINYANU, I. M. (ELSEVIER, 2011)
    In this study, nanocolumnar zinc oxide thin films were catalyst-free electrodeposited directly on n-Si and p-Si substrates, what makes an important junction for optoelectronic devices. We demonstrate that ZnO thin films ...
  • The impact of high energy ion irradiation upon CO gas sensitivity of nanostructured GaN epilayers 
    VOLCIUC, O. S.; POPA, V.; TIGINYANU, I. M.; SKURATOV, V. A.; CHO, M.; PAVLIDIS, D. (Springer Nature Switzerland, 2010)
    Photoelectrochemically nanostructured GaN epilayers were found to exhibit good sensitivity towards CO in the temperature range from 180 to 280°C. We show that subjection of nanostructured GaN samples to 166 MeV Xe+23 ion ...

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