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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • Environmentally friendly approach for nonlithographic nanostructuring of materials 
    TIGINYANU, I. M.; MONAICO, E.; ALBU, S.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    Self-organized quasi-ordered two-dimensional hexagonal arrays of pores with diameters as low as 70 nm in n-InP substrates subjected to anodic etching in aqueous solution of NaCl are reported. We show that proper periodic ...
  • Epitaxial Electrodeposition of ZnO Nanowire Arrays on p-GaN for Efficient UV-Light-Emitting Diode Fabrication 
    LUPAN, O.; PAUPORTÉ, T.; VIANA, B.; TIGINYANU, I. M.; URSAKI, V. V.; CORTÈS, R. (American Chemical Society, 2010)
    The electrochemical growth of ZnO nanowire arrays on p-type GaN (0001) single crystalline thin films supported on sapphire is demonstrated for the first time. The deposited ZnO-NWs exhibited a very low density of intrinsic ...
  • Er- and Eu-doped GaP-oxide porous composites for optoelectronic applications 
    SIRBU, L.; URSAKI, V. V.; TIGINYANU, I. M.; DOLGALEVA, Ksenia; BOYD, Robert W. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    We demonstrate the controlled preparation of Er- and Eu-doped GaP-oxide porous composites. The fabrication procedure entails the use of porous semiconductor templates and the impregnation of rare earth ions from a rare ...
  • Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another 
    MONAICO, E. I.; MONAICO, E. V.; URSAKI, V. V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2021)
    The paper reports the results of investigation of the pore growth during anodic etching of (111)-oriented wafers of Si-doped n-GaAs in an environmentally friendly NaCl based electrolyte, with switching the applied voltage ...
  • Exceptional integration of metal or semimetal nanowires in human-hair-like glass fiber 
    BADINTER, E.; IOISHER, A.; MONAICO, E.; POSTOLACHE, V.; TIGINYANU, I. M. (ELSEVIER, 2010)
    We report on a technological route allowing one to integrate huge amounts of electrically isolated metal or semimetal (Pb/Sn alloys and Bi) nanowires in glass fibers with the diameter of up to a few hundreds of micrometers ...
  • Excitation and temperature tuned photoluminescence in HgGa2S4 single crystals 
    URSAKI, V. V.; RICCI, P. C.; TIGINYANU, I. M.; ANEDDA, A.; SYRBU, N. N.; TEZLEVAN, V. E. (ELSEVIER, 2002)
    Mercury thiogallate single crystals are shown to exhibit bright photoluminescence (PL) tunable in a wide spectral range from green to red when changing the excitation power density, wavelength and sample temperature. Taking ...
  • Exciton polariton spectra and carrier effective masses in ZnO single crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V. (ELSEVIER, 2004)
    Photoreflectivity and photoluminescence spectra in the region of exciton resonance were measured in ZnO single crystals. A, B, and C exciton binding energies were determined from the energy position of the ground and excited ...
  • Exciton spectra, valence band splitting, and energy band structure of CuGaxIn1−xS2 and CuGaxIn1−xSe2 crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; NEMERENCO, L. L.; URSAKI, V. V.; TEZLEVAN, V. E.; ZALAMAI, V. V. (ELSEVIER, 2005)
    Exciton spectra are studied in CuGaXIn1−XS2 solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier ...
  • Excitonic spectra and band structure of CdGa2Se4 birefractive crystals 
    SYRBU, N. N.; STAMOV, I. G.; PARVAN, V. I.; ZALAMAI, V. V.; TIGINYANU, I. M. (Elservier, 2013)
    We report on the intersection of spectral dependences of refractive indices no and ne at the wavelengths 546nm (λ0) and 450nm (λ01) in CdGa2Se4 single crystals. The value of difference Δn=ne−no is equal to zero at the ...
  • Excitonic spectra and energy band structure of ZnAl2Se4 crystals 
    SYRBU, N. N.; ZALAMAI, V. V.; TIRON, A. V.; TIGINYANU, I. M. (Elservier, 2015)
    Absorption, reflection and wavelength modulated reflection spectra were investigated in ZnAl2Se4 crystals. The energy positions of ground and excited states for three excitonic series (А, В and С) were determined. The main ...
  • Excitonic spectra and energy band structure of ZnAl2Se4 crystals 
    SYRBU, N. N.; ZALAMAI, V. V.; TIRON, A. V.; TIGINYANU, I. M. (Elsevier, 2015)
    Absorption, reflection and wavelength modulated reflection spectra were investigated in ZnAl2Se4 crystals. The energy positions of ground and excited states for three excitonic series (А, В and С) were determined. The main ...
  • Fabrication and characterization of an individual ZnO microwire-based UV photodetector 
    CHAI, G. Y.; CHOW, L.; LUPAN, O.; RUSU, E.; STRATAN, G. I.; HEINRICH, H.; URSAKI, V. V.; TIGINYANU, I. M. (ELSEVIER, 2011)
    In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were synthesized using a chemical vapor deposition (CVD) on the Si or ...
  • Fabrication and photoluminescence properties of porous CdSe 
    TIGINYANU, I. M.; MONAICO, E.; URSAKI, V. V.; TEZLEVAN, V. E.; BOYD, Robert W. (Springer Nature Switzerland, 2005)
    We report the results of a study of the growth of pores in n-CdSen-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution ...
  • Filiform Nanostructure Technologies Based on Microwire Stretching 
    IOISHER, A. M.; BADINTER, E. Ya.; POSTOLACHE, V.; MONAICO, E. V.; URSAKI, V. V.; SERGENTU, V. V.; TIGINYANU, I. M. (American Scientific Publishers, 2012)
    A technological route allowing one to integrate huge amounts of electrically isolated metal, semiconductor, or semimetal nanowires in glass fibers with the diameter of up to a few hundreds of micrometers is presented, and ...
  • Focusing effect of photonic crystal concave lenses made from porous dielectrics 
    SERGENTU, V. V.; FOCA, E.; LANGA, S.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2004)
    In the present paper we show the photonic band structure and transmittance spectra of photonic crystal (PC) consisting of porous dielectric and compare the results with the earlier published. Frequency ranges, where PC can ...
  • Focusing slabs made of negative index materials based on inhomogeneous dielectric rods 
    SERGENTU, V. V.; URSAKI, V. V.; TIGINYANU, I. M.; FOCA, E.; FÖLL, H.; BOYD, Robert W. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2006)
    We show the advantages of using inhomogeneous dielectric rods to design photonic crystals that behave as materials with negative refractive index. We found that the analysis of light scattering properties of inhomogeneous ...
  • Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III–V semiconductors 
    FANG, C.; FOCA, E.; SIRBU, L.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO4 mixed ...
  • Formation of Porous Layers with Different Morphologies during Anodic Etching of n-InP 
    LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 1999)
    Two different morphologies of porous layers were observed in (100)-oriented anodically etched in an aqueous solution of . At high current density anodization leads to the formation of so-called current-line oriented ...
  • Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2002)
    The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of ...
  • Free excitons in strained MOCVD-grown GaN layers 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; POPA, Veaceslav; HUBBARD, S. M.; PAVLIDIS, Dimitris (Cambridge University Press, 2003)
    GaN layers grown on sapphire substrates were characterized using high resolution optical reflectivity and absorption spectroscopy in the region of ground and excited exciton states. The main exciton parameters are deduced ...

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