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Browsing Articole din publicaţii internaţionale by Title

Browsing Articole din publicaţii internaţionale by Title

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  • Raman Modes in Porous GaP under Hydrostatic Pressure 
    TIGINYANU, I. M.; URSAKI, V. V.; RAPTIS, Y. S.; STERGIOU, V.; ANASTASSAKIS, E.; HARTNAGEL, H. L.; VOGT, A.; PRÉVOT, B.; SCHWAB, C. (John Wiley & Sons, Inc., 1999)
    Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency ...
  • Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth 
    TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P. (IEEE, 1996)
    The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of ...
  • Raman scattering by porous structures with InAs quantum dots 
    MILEKHIN, Alexander; URSAKI, Veacheslav; SIRBU, Lilian; TOROPOV, Alexander; TIGINYANU, Ion; ZAHN, Dietrich R. T. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    In this paper we search for the possibilities of introducing porosity in InAs/AlAs/GaAs multilayer quantum dot structures as an additional tool for the modification of their phonon spectrum. Raman spectroscopy is used as ...
  • Raman scattering evidence on the correlation of middle range order and structural self-organization of As-S-Ge glasses in the intermediate phase region 
    TSIULYANU, D.; VERES, M.; HOLOMB, R.; CIOBANU, M. (Elsevier, 2023)
    The Raman scattering of bulk nonstoichiometric chalcogenide alloys along the pseudo-binary AsS3 – GeS4 tie-line, which completely lies in the intermediate phase (IP) region of As-S-Ge ternary system was investigated in ...
  • Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion 
    PHAN, The Long; VINCENT, Roger; CHERNS, David; NGHIA, Nguyen Xuan; URSAKI, V. V. (IOP Publishing, 2008)
    We have investigated normal and resonant Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion. Experimental results show that the normal Raman spectra consist of the conventional ...
  • Raman scattering in right angle configuration on Cu2ZnSiSe4 single crystals 
    GUC, M.; LEVCENKO, S.; ZALAMAI, V.; ARUSHANOV, E.; SYRBU, N. N. (Elservier, 2017)
    Polarized Raman scattering and resonance Raman scattering spectra of Cu2ZnSiSe4 crystals measured at temperature 300 and 10 K were investigated. Nine vibrational modes of A2 symmetry, seven modes of B2 symmetry and nine ...
  • Raman scattering investigation of MnxFe1−xIn2S4 solid solutions 
    GUC, M.; URSAKI, V. V.; BODNAR, I. V.; LOZHKIN, D. V.; ARUSHANOV, E.; IZQUIERDO-ROCA, V.; PÉREZ RODRÍGUEZ, A. (ELSEVIER, 2012)
    Spinel-type MnxFe1−xIn2S4 solid solutions grown by the planar melt crystallization method (the horizontal version of the Bridgman method) are investigated by means of energy dispersive X-ray analysis and Raman scattering ...
  • Raman scattering study of pressure-induced phase transitions in AIIB2IIIC4VI defect chalcopyrites and spinels 
    TIGINYANU, I. M.; URSAKI, V. V.; MANJÓN, F. J.; TEZLEVAN, V. E. (ELSEVIER, 2003)
    AIIB2IIIC4VI defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive ...
  • Raman scattering study of pressure-induced phase transitions in MIn2S4 spinels 
    URSAKI, V. V.; MANJÓN, F. J.; TIGINYANU, I. M.; TEZLEVAN, V. E. (IOP Publishing, 2002)
    MIn2S4 (M = Mn, Cd, Mg spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. These compounds were found to undergo a reversible phase transition to a Raman-inactive defect ...
  • Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals 
    URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...
  • Raman Spectra in As-Based Chalcogenide Optical Fibers 
    IOVU, M. S.; CULEAC, I. P.; KOUDELKA, Ladislav; VOYNAROVYCH, Ivan; VLCEK, Miroslav (American Scientific Publishers, 2014)
    Raman spectra for optical fiber samples prepared from As-based chalcogenide glass composition (As50S50, As40S60, As25S75, (As40S60)0.95:(As40Se60)0.05 and (As40S60)0.95:(Sb40S60)0.05 are investigated. The primary maximum ...
  • Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing 
    SARUA, A.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; SCHWAB, C.; GROB, J.-J.; HARTNAGEL, H. L. (American Institute of Physics, 2000)
    Porous layers on (100)-oriented n-type liquid encapsulated Czochralski grown GaP crystals were fabricated by electrochemical etching in a H2SO4 aqueous solution and analyzed by scanning electron microscopy. 12C+ ions were ...
  • Raman-active modes of porous gallium phosphide at high pressures and low temperatures 
    URSAKI, V. V.; MANJÓN, F. J.; SYASSEN, K.; TIGINYANU, I. M.; IRMER, G.; MONECKE, J. (IOP Publishing, 2002)
    Porous gallium phosphide (GaP) with a honeycomb-like morphology and a skeleton relative volume concentration c = 0.7 was investigated by Raman spectroscopy under pressure up to 10 GPa at T = 5 K. The porous samples were ...
  • Random lasing in nanostructured ZnO produced from bulk ZnSe 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; KLINGSHIRN, C.; MONAICO, E.; TIGINYANU, I. M. (IOP Publishing, 2009)
    We propose to produce three-dimensional ZnO random laser media on the basis of bulk ZnSe. Bulk ZnSe wafers are transformed into granular ZnO media by thermal treatment in oxygen ambient at temperatures in the range of ...
  • Rapid Fabrication Technique for Interpenetrated ZnO Nanotetrapod Networks for Fast UV Sensors 
    GEDAMU, Dawit; PAULOWICZ, Ingo; KAPS, Sören; LUPAN, Oleg; WILLE, Sebastian; HAIDARSCHIN, Galina; MISHRA, Yogendra Kumar; ADELUNG, Rainer (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2014)
    Two flame-based synthesis methods are presented for fabricating ZnO-nanostructure-based UV photodetectors: burner flame transport synthesis (B-FTS) and crucible flame transport synthesis (C-FTS). B-FTS allows rapid growth ...
  • A rapid hydrothermal synthesis of rutile SnO2 nanowires 
    CRETU, V.; POSTICA, V.; MISHRA, A. K.; HOPPE, M.; TIGINYANU, I.; MISHRA, Y. K.; CHOW, L.; DE LEEUW, Nora H.; ADELUNG, R.; LUPAN, O. (The Royal Society of Chemistry, 2016)
    Synthesis, characterization and DFT studies of zincdoped copper oxide nanocrystals for gas sensing applications Due to their unique properties, p-type copper oxide nanostructures have demonstrated promising potential for ...
  • A rapid hydrothermal synthesis of rutile SnO2 nanowires 
    LUPAN, O.; CHOW, L.; CHAI, G.; SCHULTE, A.; PARK, S.; HEINRICH, H. (ELSEVIER, 2009)
    Tin oxide (SnO2) nanowires with rutile structure have been synthesized by a facile hydrothermal method at 98°C. The morphologies and structural properties of the as-grown nanowires/nanoneedles were characterized by scanning ...
  • Rapid hydrothermal synthesis of zinc oxide nanorods on single crystal sapphire substrate 
    LUPAN, O.; CHOW, L.; RUDZEVICH, Y.; LIN, Y.; PARK, S.; SCHULTE, A.; MONAICO, E.; GHIMPU, L.; SONTEA, V.; TROFIM, V.; RAILEAN, S.; CRETU, V.; POCAZNOI, I. (IEEE, 2011)
    For development of ZnO nanorods-based heterostructures an environmentally benign synthesis process and fabrication route are required. Zinc oxide nanorod arrays have been grown on (0001) sapphire substrates by a rapid ...
  • Rapid photothermal processing for functionalization of nanostructured thin films 
    SHISHIYANU, S.; URSAKI, V. V.; GHIMPU, L.; LUPAN, O.; TIGINYANU, I.; SHISHIYANU, T. (Institute of Electrical and Electronics Engineerings, IEEE, 2011)
    A rapid photothermal processing (RPP) technique has been developed to functionalize a new generation of nanostructured zinc oxide film materials. An environment-friendly chemical process was used to obtain nanostructures. ...
  • Rapid Photothermal Processing for Silicon Solar Cells Fabrication 
    SHISHIYANU, S.; SINGH, R.; SHISHIYANU, T.; LUPAN, O.; RAILEAN, S.; SARGU, S. (Institute of Electrical and Electronics Engineerings, IEEE, 2006)
    In our report we demonstrated the advantage of the rapid photothermal processing (RPP) technology compare to conventional furnace technology for solar cells fabrication: short time, low thermal budget and low temperature ...

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