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Browsing Articole din publicaţii internaţionale by Author "FÖLL, H."

Browsing Articole din publicaţii internaţionale by Author "FÖLL, H."

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  • Nucleation and growth of macro pores on (100) n-type Ge 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    The authors investigate the nucleation and growth of macro pores on n-type Ge in the dark and with back side illumination. We show that nucleation on Ge is strongly dependent on the surface defect structure and therefore ...
  • Observation of crossing pores in anodically etched n-GaAs 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M. (American Institute of Physics, 2001)
    Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very ...
  • Photoluminescence mechanisms of Tb3+ - doped porous GaP 
    ELHOUICHET, H.; OUESLATI, M.; LORRAIN, N.; LANGA, S.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous GaP (por-GaP) samples are doped with terbium ions (Tb3+) by simple impregnation followed by high-temperature annealing. From scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis, we show ...
  • Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte 
    TIGINYANU, I. M.; URSAKI, V. V.; MONAICO, E.; FOCA, E.; FÖLL, H. (The Electrochemical Society, 2007)
    We propose to use a neutral electrolyte based on an aqueous solution of instead of commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical nanostructuring of and substrates. It is shown ...
  • Pores in III–V semiconductors 
    FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of ...
  • Porous II-VI vs. porous III-V semiconductors 
    LANGA, S.; TIGINYANU, I. M.; MONAICO, E.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented. It is shown that in III-V semiconductors ...
  • Porous III–V compound semiconductors: formation, properties, and comparison to silicon 
    FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...
  • Porous III–V compounds as nonlinear optical materials 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...
  • Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds 
    TIGINYANU, I. M.; LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; SERGENTU, V.; FOCA, E.; RIOS, O.; FÖLL, H. (Cambridge University Press, 2001)
    Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore ...
  • Quasi-Ordered Networks of Metal Nanotubes Embedded in Semiconductor Matrices for Photonic Applications 
    TIGINYANU, I. M.; URSAKI, V. V.; MONAICO, E.; ENACHI, M.; SERGENTU, V. V.; COLIBABA, G.; NEDEOGLO, D. D.; COJOCARU, A.; FÖLL, H. (American Scientific Publishers, 2011)
    We report on templated fabrication of metal nanotubes by electrochemical pulsed deposition of Pt in InP and ZnSe porous layers with pore diameters from 40 to 400 nm. Ordered two-dimensional hexagonal arrays of pores are ...
  • Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2001)
    Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous ...
  • Self-organized growth of single crystals of nanopores 
    LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (American Institute of Physics, 2003)
    Self-organized single crystalline two-dimensional hexagonal arrays of pores in InP semiconductor compound are reported. We show that the self-arrangement of pores can be obtained on n-type substrates with (100) and (111) ...
  • Selforganized formation of crystallographically oriented octahedral cavities during electrochemical pore etching 
    LÖLKES, S.; CHRISTOPHERSEN, M.; LANGA, S.; CARSTENSEN, J.; FÖLL, H. (ELSEVIER, 2003)
    The parameter dependence of electrochemically etched pores in silicon is studied. Using HF containing organic electrolytes and backside illumination on moderately doped silicon, macropores and octahedrally shaped pores can ...
  • Single crystalline 2D porous arrays obtained by self organization in n-Inp 
    LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage ...
  • Strong visible emission from porous GaP doped with Eu and Tb ions 
    ELHOUICHET, H.; DABOUSSI, S.; AJLANI, H.; NAJAR, A.; MOADHEN, A.; OUESLATI, M.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H. (ELSEVIER, 2005)
    We demonstrate strong room-temperature photoluminescence (PL) in the visible region of the spectrum from europium (Eu3+)-doped porous GaP (por-GaP) layers. Eu3+ ions were infiltrated into the host matrix by simple impregnation ...
  • Strongly frequency dependent focusing efficiency of a concave lens based on two-dimensional photonic crystals 
    FOCA, E.; FÖLL, H.; CARSTENSEN, J.; SERGENTU, V. V.; TIGINYANU, I. M.; DASCHNER, F.; KNÖCHEL, R. (American Institute of Physics, 2006)
    Results of an experimental study of a concave lens based on a two-dimensional microwave photonic crystal with neff<1 are shown. We demonstrate that the lens focuses electromagnetic radiation for transverse electric (TE) ...
  • Superlensing with plane plates consisting of dielectric cylinders in glass envelopes 
    FOCA, E.; SERGENTU, V. V.; DASCHNER, F.; TIGINYNAU, I. M.; URSAKI, V. V.; KNÖCHEL, R.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    The approach of designing negative-refractive-index materials on the basis of dielectric rods with a gradient of the dielectric constant is tested experimentally. A triangular-lattice plane-parallel slab assembled from ...
  • Uniform and Nonuniform Nucleation of Pores during the Anodization of Si, Ge, and III-V Semiconductors 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; STEEN, K.; FREY, S.; TIGINYANU, I. M.; FÖLL, H. (The Electrochemical Society, Inc., 2005)
    Morphology is one of the basic characteristics of porous layers. For electrochemically grown pores, morphology is strongly dependent on the starting phase of pore growth, the so-called nucleation phase. This paper addresses ...
  • Voltage oscillations – an emergent property at high density pore growth 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper addresses macroscopic voltage oscillations observed during anodic etching of pores in n-InP and GaP. These oscillations always occur concurrently with the modulation of pore diameters which are synchronized on ...
  • Waveguide Structures Based on Porous Indium Phosphide 
    LANGA, S.; FREY, S.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M.; HERMANN, M.; BÖTTGER, G. (The Electrochemical Society, 2005)
    We researched the possibilities for engineering the morphology of porous structures in n-InP. Lithographic patterning of the sample surface before anodic etching was shown to modify considerably the electric field distribution ...

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