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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2001)
    Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous ...
  • Self-organized growth of single crystals of nanopores 
    LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (American Institute of Physics, 2003)
    Self-organized single crystalline two-dimensional hexagonal arrays of pores in InP semiconductor compound are reported. We show that the self-arrangement of pores can be obtained on n-type substrates with (100) and (111) ...
  • Semiconductor-oxide nanocomposites on the basis of porous semiconductors 
    SIRBU, Lilian; URSAKI, V. V.; TIGINYANU, I. M.; BOYD, R. W. (Institutul de Fizică Aplicată, AŞM, 2006)
    Over the last years, there has been considerable interest in optical properties of rare-earth-ion doped nanocrystals dispersed in a transparent medium as potential optoelectronic materials. This issue becomes especially ...
  • Shallow donor states induced in ZnSe:Au single crystals by lattice deformation 
    NEDEOGLO, N. D.; NEDEOGLO, D. D.; SIRKELI, V. P.; TIGINYANU, I. M.; LAIHO, R.; LÄHDERANTA, E. (American Institute of Physics, 2008)
    Photoluminescence (PL) spectra are investigated in n-ZnSe single crystals at different temperatures from 4.4 to 300 K immediately after doping with Au from melt of Se+Au or Zn+Au and after storage of the doped samples for ...
  • Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; SYRBU, N. N.; ZALAMAI, V. V.; HUBBARD, S.; PAVLIDIS, D. (IOP Publishing, 2002)
    Sharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite ...
  • Single crystalline 2D porous arrays obtained by self organization in n-Inp 
    LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage ...
  • Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching 
    DÍAZ-GUERRA, C.; PIQUERAS, J.; POPA, V.; COJOCARU, A.; TIGINYANU, I. M. (American Institute of Physics, 2005)
    The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence sCLd in the scanning electron microscope. Columnar structures with diameters of 150–250 ...
  • Strong visible emission from porous GaP doped with Eu and Tb ions 
    ELHOUICHET, H.; DABOUSSI, S.; AJLANI, H.; NAJAR, A.; MOADHEN, A.; OUESLATI, M.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H. (ELSEVIER, 2005)
    We demonstrate strong room-temperature photoluminescence (PL) in the visible region of the spectrum from europium (Eu3+)-doped porous GaP (por-GaP) layers. Eu3+ ions were infiltrated into the host matrix by simple impregnation ...
  • Strongly frequency dependent focusing efficiency of a concave lens based on two-dimensional photonic crystals 
    FOCA, E.; FÖLL, H.; CARSTENSEN, J.; SERGENTU, V. V.; TIGINYANU, I. M.; DASCHNER, F.; KNÖCHEL, R. (American Institute of Physics, 2006)
    Results of an experimental study of a concave lens based on a two-dimensional microwave photonic crystal with neff<1 are shown. We demonstrate that the lens focuses electromagnetic radiation for transverse electric (TE) ...
  • Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure 
    GOMIS, O.; SANTAMARÍA-PÉREZ, D.; VILAPLANA, R.; LUNA, R.; SANS, J. A.; MANJÓN, F. J.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2014)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB2X4 ordered-vacancy compounds and exhibits a ...
  • Structural and optical high-pressure study of spinel-type MNIN2S4 
    MANJÓN, F. J.; SEGURA, A.; AMBOAGE, M.; PELLICER-PORRES, J.; SÁNCHEZ-ROYO, J. F.; ITIÉ, J. P.; FLANK, A. M.; LAGARDE, P.; POLIAN, A.; URSAKI, V. V.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    We report a combined study of the structural and electronic properties of the spinel-type semiconductor MnIn2S4 under high pressures by means of X-ray diffraction (ADXRD), X-ray absorption (XAS), and optical absorption ...
  • Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques 
    TIGINYANU, I. M.; POPA, V.; VOLCIUC, O. (American Institute of Physics, 2005)
    We show that host defects introduced at the surface of GaN epilayers by mechanical means se.g., using needles, microscribersd, or 2-keV-argon ion beam are resistant to photoelectrochemical etching in aqueous solution of ...
  • Surface-related phonon mode in porous GaP 
    TIGINYANU, I. M.; URSAKI, V. V.; KARAVANSKII, V. A.; SOKOLOV, V. N.; RAPTIS, Y. S.; ANASTASSAKIS, E. (ELSEVIER, 1996)
    Porous GaP layers prepared by electrochemical anodization of (1 0 0) and (1 1 1) A-oriented n-GaP crystalline substrates in HF solution have been studied by Raman spectroscopy. A surface vibrational mode at 397 cm−1 was ...
  • Synthesis and characterization of Cu-doped ZnO one-dimensional structures for miniaturized sensor applications with faster response 
    CHOW, L.; LUPAN, O.; CHAI, G.; KHALLAF, H.; ONO, K.; ROLDAN CUENYA, B.; TIGINYANU, I. M.; URSAKI, V. V.; SONTEA, V.; SCHULTE, A. (ELSEVIER, 2013)
    Detection of chemicals and biological species is an important issue to human health and safety. In this paper, we report the hydrothermal synthesis at 95°C of Cu-doped ZnO low-dimensional rods for room-temperature (RT) ...
  • Synthesis and characterization of ZnO nanowires for nanosensor applications 
    LUPAN, O.; EMELCHENKO, G. A.; URSAKI, V. V.; CHAI, G.; REDKIN, A. N.; GRUZINTSEV, A. N.; TIGINYANU, I. M.; CHOW, L.; ONO, L. K.; ROLDAN CUENYA, B.; HEINRICH, H.; YAKIMOV, E. E. (ELSEVIER, 2010)
    In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650°C. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ...
  • Temperature dependence of Raman scattering in porous gallium phosphide 
    URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; FOCA, E. V.; SYRBU, N. N. (IOP Publishing, 2001)
    Porous layers fabricated by electrochemical anodization of (111)A-oriented n-GaP:Te substrates were studied by Raman scattering spectroscopy in the temperature interval from 10 to 300 K. Along with the transverse-optical ...
  • Temperature dependence of the photoluminescence spectra in AgGaS2 
    RICCI, P. C.; ANEDDA, A.; CORPINO, R.; CARBONARO, C. M.; MARCEDDU, M.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2005)
    The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7eV) whose photoluminescence properties are characterized by excitons and donor–acceptor pairs recombinations. We have performed ...
  • Terahertz conductivity of magnetoexcitons and electrons in semiconductor nanostructures 
    LLOYD-HUGHES, J.; FAIST, J.; BEERE, H. E.; RITCHIE, D. A.; SIRBU, L.; TIGINYANU, I. M.; MERCHANT, S. K. M.; JOHNSTON, M. B. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2009)
    Using terahertz time-domain spectroscopy we investigate how quantum, magnetic and electrostatic confinement alters the photoconductivity of nanostructured semiconductors. In 2.0 THz and 2.9THz GaAs/AlGaAs quantum cascade ...
  • Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs 
    LLOYD-HUGHES, J.; MERCHANT, S. K. E.; SIRBU, L.; TIGINYANU, I. M.; JOHNSTON, M. B. (American Physical Society, 2008)
    Nanostructured semiconductors with favorable optoelectronic properties can be created by electrochemical etching, a fabrication process that is scalable for mass market applications. Using terahertz photoconductivity ...
  • Thermally activated cation ordering in ZnGa2Se4single crystals studied by Raman scattering, optical absorption, andab initiocalculations 
    VILAPLANA, R.; GOMIS, O.; PEREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRIGUEZ-HERNANDEZ, P.; MUŇOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (IOP Publishing, 2013)
    Order–disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown ...

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