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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • Raman Modes in Porous GaP under Hydrostatic Pressure 
    TIGINYANU, I. M.; URSAKI, V. V.; RAPTIS, Y. S.; STERGIOU, V.; ANASTASSAKIS, E.; HARTNAGEL, H. L.; VOGT, A.; PRÉVOT, B.; SCHWAB, C. (John Wiley & Sons, Inc., 1999)
    Bulk and free-standing porous membranes of GaP have been characterised by Raman spectroscopy under hydrostatic pressure, with emphasis to the Fröhlich surface vibration mode. Under compression, an increase in the frequency ...
  • Raman scattering analysis of InGaAs/InP: effect of rare earth (dysprosium) addition during liquid phase epitaxial growth 
    TIGINYANU, I. M.; URSAKI, V. V.; PODOR, B.; CSONTOS, L.; SHONTYA, V. P. (IEEE, 1996)
    The authors present the results of Raman scattering investigation of the effect of the variation of the Dy doping level on the properties of InGaAs layers on InP, with the aim to elucidate the mechanisms of the effects of ...
  • Raman scattering study of pressure-induced phase transitions in AIIB2IIIC4VI defect chalcopyrites and spinels 
    TIGINYANU, I. M.; URSAKI, V. V.; MANJÓN, F. J.; TEZLEVAN, V. E. (ELSEVIER, 2003)
    AIIB2IIIC4VI defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive ...
  • Raman scattering study of pressure-induced phase transitions in MIn2S4 spinels 
    URSAKI, V. V.; MANJÓN, F. J.; TIGINYANU, I. M.; TEZLEVAN, V. E. (IOP Publishing, 2002)
    MIn2S4 (M = Mn, Cd, Mg spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. These compounds were found to undergo a reversible phase transition to a Raman-inactive defect ...
  • Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals 
    URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...
  • Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing 
    SARUA, A.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; SCHWAB, C.; GROB, J.-J.; HARTNAGEL, H. L. (American Institute of Physics, 2000)
    Porous layers on (100)-oriented n-type liquid encapsulated Czochralski grown GaP crystals were fabricated by electrochemical etching in a H2SO4 aqueous solution and analyzed by scanning electron microscopy. 12C+ ions were ...
  • Raman-active modes of porous gallium phosphide at high pressures and low temperatures 
    URSAKI, V. V.; MANJÓN, F. J.; SYASSEN, K.; TIGINYANU, I. M.; IRMER, G.; MONECKE, J. (IOP Publishing, 2002)
    Porous gallium phosphide (GaP) with a honeycomb-like morphology and a skeleton relative volume concentration c = 0.7 was investigated by Raman spectroscopy under pressure up to 10 GPa at T = 5 K. The porous samples were ...
  • Random lasing in nanostructured ZnO produced from bulk ZnSe 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; KLINGSHIRN, C.; MONAICO, E.; TIGINYANU, I. M. (IOP Publishing, 2009)
    We propose to produce three-dimensional ZnO random laser media on the basis of bulk ZnSe. Bulk ZnSe wafers are transformed into granular ZnO media by thermal treatment in oxygen ambient at temperatures in the range of ...
  • Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods 
    URSAKI, V. V.; LUPAN, O. I.; CHOW, L.; TIGINYANU, I. M.; ZALAMAI, V. V. (ELSEVIER, 2007)
    Multiphonon Resonant Raman scattering (RRS) excited by 351.1 and 363.8 nm lines of an Ar+ laser was studied at temperatures from 10 to 300 K in as-grown and rapid thermal annealed (RTA) aluminum doped ZnO nanorods synthesized ...
  • Rayleigh scattering of a metal nanoparticle on a flat dielectric surface 
    SERGENTU, V.; ESINENCO, D.; SIRBU, L.; VODĂ, I.; VOICU, R.; TIGINYANU, I. M.; URSAKI, V. (IEEE, 2010)
    It is shown experimentally and theoretically that electromagnetic interaction of a nanoparticle with a flat dielectric surface leads to occurrence of an additional peak in the spectrum of Rayleigh scattering which is due ...
  • Recombination in HgGaInS4 single crystals 
    ANEDDA, A.; CASU, M. B.; SERPI, A.; BURLAKOV, I. I.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 1997)
    Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV/decade as well as a further ...
  • Red and green nanocomposite phosphors prepared from porous GaAs templates 
    SYRBU, Lilian; URSAKI, V. V.; TIGINYANU, I. M.; DOLGALEVA, Ksenia; BOYD, Robert W. (IOP Publishing, 2007)
    Rare-earth-containing oxide nanocomposites are prepared in a controlled fashion from porous GaAs templates. The initial porous GaAs network is replaced by a β-Ga2O3 one during annealing at temperatures from 500 to 900 °C. ...
  • Refractive index dispersion deduced from lasing modes in ZnO microtetrapods 
    URSAKI, V. V.; ZALAMAI, V. V.; TIGINYANU, I. M.; BURLACU, A.; RUSU, E. V.; KLINGSHIRN, C. (American Institute of Physics, 2009)
    High optical quality, well end leg faceted ZnO microtetrapods sustaining lasing modes with quality factors of 2500–3000 have been grown by carbothermal chemical vapor deposition. It is shown that lasing is due to longitudinal ...
  • Relation of AIIBIII2XVI4 Compounds to Other Materials, Their Properties and Applications (Instead of Introduction) 
    URSAKI, V. V.; TIGINYANU, I. M. (Springer-Verlag Berlin Heidelberg, 2014)
    This chapter provides a review of AIIB2IIIX4VI compounds as a class of materials in a wide family of ternary compounds. The origin and the place of these materials in the hierarchy of ternary compounds are presented. The ...
  • Renormalization of the Coulomb Law in an Amorphous System of Metallic Nanospheres and Its Impact on the Electronic Subsystem 
    SERGENTU, V. V.; URSAKI, V. V.; TIGINYANU, I. M. (American Scientific Publishers, 2014)
    We demonstrate relations between the renormalization of the Coulomb interaction in a disordered system of metallic nanospheres and the changes induced by this renormalization in the spectrum of the electronic subsystem of ...
  • Resonance Raman scattering by excitonic polaritons in CuGaS2 
    SYRBU, N. N.; BLAZHE, M.; TIGINYANU, I. M.; TEZLEVAN, V. E. (Springer Nature Switzerland, 2002)
    Resonance Raman scattering by exciton polaritons in crystals of CuGaS2 under excitation with the 4880 and 4765 Å lines of an Ar+ laser at 9 K is studied. Lines of one-and two-phonon scattering of excitonic polaritons are ...
  • Resonance Raman scattering in CuGaxAl1-xS2crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; DOROGAN, A. V. (IOP Publishing, 2008)
    The change of polarization of the resonant Raman scattering lines is studied in CuGaxAl1−xS2 crystals with x equal to 1, 0.95 and 0.9 assuming resonance conditions with 4880 and 4765 Å Ar laser lines. Linear and circular ...
  • Retroreflection from disordered porous semiconductors 
    PRISLOPSKI, S.; TIGINYANU, I. M.; GHIMPU, L.; MONAICO, E.; SIRBU, L.; ZHUKOVSKY, S. V.; GAPONENKO, S. V. (IEEE, 2011)
    Prominent retroreflection is experimentally observed in disordered porous InP membranes. It is believed to be the result of an interplay between Fresnel-like and Bragg-like reflection for different components of an impinging ...
  • Retroreflection of light from nanoporous InP: correlation with high absorption 
    PRISLOPSKI, S. Ya.; TIGINYANU, I. M.; GHIMPU, L.; MONAICO, E.; SIRBU, L.; GAPONENKO, S. V. (Springer Nature Switzerland, 2014)
    Pronounced retroreflection behavior is reported for a fishnet nanoporous strongly absorbing semiconductor material. Retroreflection appears along with diffusive specular reflection for all angles of incidence for light ...
  • Selective hydrogen gas nanosensor using individual ZnO nanowire with fast response at room temperature 
    LUPAN, O.; URSAKI, V. V.; CHAI, G.; CHOW, L.; EMELCHENKO, G. A.; TIGINYANU, I. M.; GRUZINTSEV, A. N.; REDKIN, A. N. (ELSEVIER, 2010)
    In this work, we report on a single ZnO nanowire-based nanoscale sensor fabricated using focused ion beam (FIB/SEM) instrument. We studied the diameter dependence of the gas response and selectivity of ZnO nanowires (NWs) ...

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