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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • Photoluminescence study of CdTe/CdS solar cells grown from a source with Cu residual impurity 
    GHIMPU, L.; URSAKI, V. V.; POTLOG, T.; TIGINYANU, I. M. (IOP Publishing, 2005)
    Three photoluminescence (PL) bands centred at 1.30, 1.35 and 1.45 eV have been observed in the PL spectrum of CdTe/CdS thin film solar cells grown by close space sublimation (CSS) techniques from a source with Cu residual ...
  • Photosensivity of heterostructures produced by aerosol deposition of ZnMgO thin films on Si substrates 
    MORARI, Vadim; POSTOLACHE, Vitalie; RUSU, Emil; LEISTNER, Karin; NIELSCH, Kornelius; URSAKI, V. V.; TIGINYANU, I. M. (Universitatea Politehnică din Bucureşti, 2020)
    ZnMgO thin films were prepared on Si substrates by aerosol deposition method using zinc acetate and magnesium acetate as precursors. The obtained films were investigated by scanning electron microscopy (SEM), energy ...
  • Polariton emission from CuGaSe2 crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; TEZLEVAN, V. E.; ZALAMAI, V. V.; NEMERENCO, L. L. (ELSEVIER, 2005)
    The value of longitudinal–transverse splitting ωLT equal to 2.5–2.8meV and the translation mass M=2.5m0 were determined for the A exciton as a result of investigation of the reflectivity and luminescence spectra of CuGaSe2 ...
  • Polarized Retroreflection from Nanoporous III–V Semiconductors 
    PRISLOPSKI, S. Ya.; GAPONENKO, S. V.; MONAICO, E.; SERGENTU, V. V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2018)
    Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we ...
  • Poly(p-phenylene vinylene)/porous GaP composite materials 
    LE RENDU, P.; NGUYEN, T. P.; LAKEHAL, M.; IP, J.; TIGINYANU, I. M.; SARUA, A.; IRMER, G. (ELSEVIER, 2001)
    We report results obtained from physical characterization of thin composite films made by mixing poly(p-phenylene vinylene) (PPV) and porous gallium phosphide (GaP) particles with different GaP concentrations. Optical ...
  • Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte 
    TIGINYANU, I. M.; URSAKI, V. V.; MONAICO, E.; FOCA, E.; FÖLL, H. (The Electrochemical Society, 2007)
    We propose to use a neutral electrolyte based on an aqueous solution of instead of commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical nanostructuring of and substrates. It is shown ...
  • Pores in III–V semiconductors 
    FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of ...
  • Porosity-induced blueshift of photoluminescence in CdSe 
    MONAICO, E.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2006)
    Porous CdSe layers have been fabricated by anodic etching of n-type single crystalline substrates with different values of conductivity. The morphology and porosity of the layers thus produced were found to be controlled ...
  • Porosity-induced gain of luminescence in CdSe 
    MONAICO, E.; URSAKI, V. V.; URBIETA, A.; FERNÁNDEZ, P.; PIQUERAS, J.; BOYD, R. W.; TIGINYANU, I. M. (IOP Publishing, 2004)
    Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter ...
  • Porous II-VI vs. porous III-V semiconductors 
    LANGA, S.; TIGINYANU, I. M.; MONAICO, E.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented. It is shown that in III-V semiconductors ...
  • Porous III–V compound semiconductors: formation, properties, and comparison to silicon 
    FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...
  • Porous III–V compounds as nonlinear optical materials 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...
  • Prediction of negative index material lenses based on metallo-dielectric nanotubes 
    SERGENTU, V. V.; TIGINYANU, I. M.; URSAKI, V. V.; ENACHI, M.; ALBU, S. P.; SCHMUKI, P. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008)
    We propose to assemble negative index materials (NIMs) from dielectric nanotubes with inner and outer surfaces covered by thin metallic films. The focusing properties of flat and concave lenses assembled from metallized ...
  • Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4 
    LIANG, A.; SHI, L. T.; GALLEGO-PARRA, S.; GOMIS, O.; ERRANDONEA, D.; TIGINYANU, I. M.; URSAKI, V. V.; MANJÓN, F. J. (Elsevier, 2021)
    This paper reports a joint experimental and theoretical study of the electronic band structure of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa2S4 and HgGa2S4. High-pressure optical-absorption ...
  • Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4 
    GRZECHNIK, A.; URSAKI, V. V.; SYASSEN, K.; LOA, I.; TIGINYANU, I. M.; HANFLAND, M. (ELSEVIER, 2001)
    The high-pressure behavior of semiconducting cadmium thiogallate CdGa2Se4 with the defect chalcopyrite structure (I4, Z=2) is studied by in situ angle-dispersive synchrotron X-ray powder diffraction and optical reflectivity ...
  • Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds 
    TIGINYANU, I. M.; LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; SERGENTU, V.; FOCA, E.; RIOS, O.; FÖLL, H. (Cambridge University Press, 2001)
    Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore ...
  • Quasi-Ordered Networks of Metal Nanotubes Embedded in Semiconductor Matrices for Photonic Applications 
    TIGINYANU, I. M.; URSAKI, V. V.; MONAICO, E.; ENACHI, M.; SERGENTU, V. V.; COLIBABA, G.; NEDEOGLO, D. D.; COJOCARU, A.; FÖLL, H. (American Scientific Publishers, 2011)
    We report on templated fabrication of metal nanotubes by electrochemical pulsed deposition of Pt in InP and ZnSe porous layers with pore diameters from 40 to 400 nm. Ordered two-dimensional hexagonal arrays of pores are ...
  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing 
    URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)
    It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...
  • Raman and IR-Reflectance Spectra of Porous III–V Semiconductor Structures 
    SARUA, A.; GÄRTNER, G.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; HARTNAGEL, H. L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2000)
    Porous layers on the basis of LEC-grown n-type crystals of (111)-GaP and (100)-InP were fabricated by electrochemical etching in aqueous acidic solutions. The prepared samples were studied by micro-Raman analysis and by ...

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