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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • URSAKI, V. V.; RUSU, E. V.; SARUA, A.; KUBALL, M.; STRATAN, G. I.; BURLACU, A.; TIGINYANU, I. M. (IOP Publishing, 2007)
    A new ZnO micro/nanostructure morphology in the form of micro-torches was grown in the family of ZnO hierarchical structures by a simplified thermal chemical vapour transport and condensation method using a vertical furnace. ...
  • STEELE, J. A.; RADHANPURA, K.; LEWIS, R. A.; SIRBU, L.; TIGINYANU, I. M. (IEEE, 2014)
    Bulk (111) and (100) InP wafers and nanoporous membranes have been studied using free space time-domain spectroscopy. The nonlinear optical response is shown to be dependent on heavy ion (Kr+15, Xe+23) dose, crystallographic ...
  • LUPAN, O.; PAUPORTÉ, Th.; TIGINYANU, I. M.; URSAKI, V. V.; HEINRICH, H.; CHOW, L. (ELSEVIER, 2011)
    Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on ...
  • STEELE, J. A.; LEWIS, R. A.; SIRBU, L.; ENACHI, M.; TIGINYANU, I. M.; SKURATOV, V. A. (IOP Publishing, 2015)
    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was ...
  • BURLAKOV, I. I.; RAPTIS, Y.; URSAKI, V. V.; ANASTASSAKIS, E.; TIGINYANU, I. M. (ELSEVIER, 1997)
    CdAl2S4 single crystals with the defect chalcopyrite structure have been studied by Raman spectroscopy at hydrostatic pressures up to 150 kbar. The Raman scattering spectra were found to undergo substantial changes around ...
  • URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; HUBBARD, S.; PAVLIDIS, D. (American Institute of Physics, 2003)
    Persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and ...
  • URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • RICCI, P. C.; ANEDDA, A.; CORPINO, R.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2003)
    Mercury thiogallate, HgGa2S4 is a defect chalcopyrite semiconductor with the space group S42 which offers a combination of attractive properties for applications. In order to obtain information about the electron states ...
  • DIKUSAR, A. I.; BRUK, L. I.; MONAICO, E. V.; SHERBAN, D. A.; SIMASHKEVICH, A. V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2008)
    The possibility of nanostructuring of surfaces of indium phosphide with hole conduction is confirmed. The technique of manufacturing and research of SnO2/InP heterostructures with a nanoporous surface at the interface is ...
  • LLOYD-HUGHES, J.; MÜLLER, S.; SCALARI, G.; BISHOP, H.; CROSSLEY, A.; ENACHI, M.; SIRBU, L.; TIGINYANU, I. M. (American Institute of Physics, 2012)
    Porous honeycombs of n-type InP were investigated by terahertz time-domain and x-ray photoemission spectroscopies. After photoexcitation the dark conductivity was found to increase quasi-irreversibly, recovering only after ...
  • RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V. (Springer Nature Switzerland, 1994)
    Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of ...
  • PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • URSAKI, V. V.; LUPAN, O.; TIGINYANU, I. M.; CHAI, G.; CHOW, L. (American Scientific Publishers, 2011)
    We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96°C). The results of micro-Raman ...
  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L. (American Institute of Physics, 2004)
    Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound ...
  • MONAICO, E.; TIGINYANU, I. M.; URSAKI, V. V.; SARUA, A.; KUBALL, M.; NEDEOGLO, D. D.; SIRKELI, V. P. (IOP Publishing, 2007)
    Electrochemical etching of pores in as-grown and doped n-type ZnSe substrates is reported. To dope the samples the as-grown semi-insulating substrates were annealed in a Zn melt containing Al impurity at concentrations ...
  • ELHOUICHET, H.; OUESLATI, M.; LORRAIN, N.; LANGA, S.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous GaP (por-GaP) samples are doped with terbium ions (Tb3+) by simple impregnation followed by high-temperature annealing. From scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis, we show ...
  • ANEDDA, A.; CARBONARO, C. M.; CHIRIU, D.; CORPINO, R.; MARCEDDU, M.; RICCI, P. C.; GEORGOBIANI, A. N.; TAGIEV, B. G.; TAGIEV, O. B.; ABUSHEV, S. A.; TIGINYANU, I. M. (John Wiley & Sons, Inc., 2006)
    We investigated the room temperature photoluminescence of calcium thiogallate codoped with Ce and Pr. Line shaped emissions superimposed over a wide and composed luminescence band were observed. Different components were ...
  • SHISHIYANU, S. T.; LUPAN, O. I.; MONAICO, E. V.; URSAKI, V. V.; SHISHIYANU, T. S.; TIGINYANU, I. M. (ELSEVIER, 2005)
    Aluminum-doped zinc oxide (ZnO:Al) films fabricated by chemical bath deposition are characterized using scanning electron microscopy and photoluminescence (PL) spectroscopy. The impact of rapid thermal annealing (RTA) upon ...
  • URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (IOP Publishing, 2004)
    The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar+ laser at different excitation power densities and temperatures. The ...

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