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Browsing Articole din publicaţii internaţionale by Title

Browsing Articole din publicaţii internaţionale by Title

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  • Formation of gap edges and shift of Fermi level in As2S3 - based glass alloys with addition of germanium 
    ANDRIESH, A. M.; TSIULYANU, D. I. (Elsevier, 1987)
    The gap formation with the composition change is studied on the basis of complex analysis of the experimental results obtained by investigation of optical absorption and conductivity of both As2S3 Ge glassy materials and ...
  • Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy 
    SYRBU, N. N.; DOROGAN, V. V.; CREŢU, R. V. (Elservier, 1996)
    The results of In0.53Ga0.47As InP epitaxial structure interface investigation are presented. It is shown that the transition from InP to In0.53Ga0.47As layer is associated with an interfacial transitional layer formation ...
  • Formation of InP nanomembranes and nanowires under fast anodic etching of bulk substrates 
    MONAICO, Eduard; TIGINYANU, Ion; VOLCIUC, Olesea; MEHRTENS, Thorsten; ROSENAUER, Andreas; GUTOWSKI, Jürgen; NIELSCH, Kornelius (ELSEVIER, 2014)
    We demonstrate that fast anodic etching of bulk crystalline substrates of n-InP via photolithographically defined windows leads to the formation of nanomembranes and nanowires being promising for device applications. It ...
  • Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III–V semiconductors 
    FANG, C.; FOCA, E.; SIRBU, L.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    Deep straight macropores in n-type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO4 mixed ...
  • Formation of Porous Layers with Different Morphologies during Anodic Etching of n-InP 
    LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 1999)
    Two different morphologies of porous layers were observed in (100)-oriented anodically etched in an aqueous solution of . At high current density anodization leads to the formation of so-called current-line oriented ...
  • Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2002)
    The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of ...
  • Formation of the Optimal Machining Process Based on the Analysis of Design and Technological Dimension Relations 
    TOCA, Alexei; STINGACI, Ion (Trans Tech Publications Ltd, 2013)
    Design decisions for a detail (the form, structure of surfaces, the sizes, accuracy, roughness and technical requirements) are accepted considering first of all functional requirements. At the same time the designer carries ...
  • The formative potential of museum education exploited in higher education institutions 
    FILIPSKI, Tatiana (Universitatea Liberă Internaţională din Moldova, 2020)
    The following article represents a theoretical and practical study which emphasizes the importance of formative potential of museum education, which contributes to improvement of moral, cultural, civic and professional ...
  • Formulation of the composition from scalded dough with natural sweetener 
    BANTEA-ZAGAREANU, Valentina (Ştefan cel Mare University, Suceava, 2023)
    The research aims to incorporate a natural sweetener into the composition of a product based on parboiled dough with filling and identify the optimal processing factors and conditions for the dough and filling. Physico-chemical ...
  • Fracture toughness and hardness at micro- and nanoindentation of phosphate glasses depending on their composition 
    POPA, M.; SHIKIMAKA, O.; GRABCO, D.; SAVA, B. A.; BOROICA, L.; ELISA, M.; PYRTSAC, C.; BARBOS, Z.; BELEI, I. (Institutul de Fizică Aplicată al AŞM, 2016)
    Two groups of glasses of a basic aluminophosphate (Al2O3–P2O5–Li2O–BaO–La2O3) composition (APG) doped with Dy2O3, Tb2O3 and Fe2O3, and borophosphate (B2O3–P2O5–Li2O–Al2O3–ZnO) composition (BPG) codoped with Dy2O3–Tb2O3, ...
  • Free excitons in strained MOCVD-grown GaN layers 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; POPA, Veaceslav; HUBBARD, S. M.; PAVLIDIS, Dimitris (Cambridge University Press, 2003)
    GaN layers grown on sapphire substrates were characterized using high resolution optical reflectivity and absorption spectroscopy in the region of ground and excited exciton states. The main exciton parameters are deduced ...
  • Free-Standing Large-Area Nanoperforated Gold Membranes Fabricated by Hopping Electrodeposition 
    MONAICO, Eduard V.; MONAICO, Elena I.; URSAKI, Veaceslav V.; TIGINYANU, Ion M. (The Electrochemical Society, 2020)
    A room-temperature two-step cost-effective electrochemical technology is proposed for the preparation of free-standing Au nanomembranes. A thin Au film with the thickness less than 100 nm was deposited by pulsed electroplating ...
  • Frenkel excitons and band structure in Sb2S3 single crystals 
    BERIL, S. I.; STAMOV, I. G.; TIRON, A. V.; ZALAMAI, V. V.; SYRBU, N. N. (Elservier, 2020)
    Anisotropy of optical properties of Sb2S3 single crystals was investigated at 11 and 300 K. Ground and excited states of four excitonic states (A, B, C and D) were found out. Parameters of observed excitons and bands V1 – ...
  • Frenkel excitons and the energy bands structure in crystals PbGa2S4 
    STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. I.; ZALAMAI, V. V. (Institutul de Fizică Aplicată al AŞM, 2012)
    On the basis of lead tiogalat (PbGa2S4) was created the active elements for lasers which allow to control the generation spectroscopic properties of lasers and parameters of the laser radiation. In these crystals were found ...
  • Fresnel lens-type energy concentrator for space-based solar power systems 
    SERGENTU, Vladimir; URSAKI, Veacheslav; IOIŞER, Anatolii; ADAR, Eliezer (Romanian Academy Publishing House, 2018)
    In this paper a new concept of designing Fresnel lens concentrators on the basis of magnetic microwires with a complex spatial distribution of their density is proposed. The optical properties of microwires are analyzed ...
  • From 1D to 2D Cd(II) and Zn(II) Coordination Networks by Replacing Monocarboxylate with Dicarboxylates in Partnership with Azine Ligands:Synthesis, Crystal Structures, Inclusion, and Emission Properties 
    KRAVTSOV, Victor Ch.; LOZOVAN, Vasile; SIMINEL, Nikita; COROPCEANU, Eduard B.; KULIKOVA, Olga V.; COSTRIUCOVA, Natalia V.; FONARI, Marina S. (MDPI, Basel, Switzerland, 2020)
    Eight mixed-ligand coordination networks, [Cd(2-aba)(NO3)(4-bphz)3/2]n n(dmf) (1), [Cd(2-aba)2(4-bphz)]n 0.75n(dmf) (2), [Cd(seb)(4-bphz)]n n(H2O) (3), [Cd(seb)(4-bpmhz)]n n(H2O) (4), [Cd(hpa)(3-bphz)]n (5), [Zn(1,3-bdc) ...
  • From linear to circular fashion: is it new trend or necessity? 
    SCRIPCENCO, Angela; PASHKEVICH, Kalina (Kyiv National University of Technology and Design, 2020)
    We live in turbulent world. Issues such as climate change, unlimited use of natural resources and work forces have initiated concerns within the wider society about the way the fashion industry currently operates. There ...
  • From photonic crystals to metamaterials: new challenges 
    TIGINYANU, I. M. (Institutul de Fizică Aplicată, AŞM, 2006)
    Photonic crystals represent periodic dielectric structures designed to control the flow of electromagnetic radiation. Photonic crystals can be viewed as a subclass of a larger family of material systems called metamaterials ...
  • Fröhlich modes in gan columnar nanostructures 
    TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • Fröhlich modes in porous III-V semiconductors 
    SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...

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