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Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

Browsing Articole din publicaţii internaţionale by Author "TIGINYANU, I. M."

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  • Microcharacterization of GaN Nanomembranes Using Cathodoluminescence Microanalysis 
    STEVENS-KALCEFF, Marion A.; TIGINYANU, I. M.; POPA, V. (ProQuest LLC, 2012)
    Gallium nitride (GaN) is a thermally stable, chemically inert wide-band-gap compound semiconductor with applications in high temperature, high power, high frequency electronic devices, solid state sensors, optoelectronics ...
  • Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers 
    COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; MUTAMBA, K.; SAGLAM, M.; HARTNAGEL, H. L. (IEEE, 2004)
    Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements ...
  • Morphology and chemical composition microanalysis of 2D and 3D ordered structures on porous InP 
    LANGA, S.; SIRBU, L.; MONAICO, E.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous InP proves to be promising for use in nanotechnologies due to the possibility to fabricate ordered structures like two-dimensional (2D) single crystals of nanopores. The main goal of this paper is to demonstrate ...
  • Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte 
    VOLCIUC, O.; MONAICO, E.; ENACHI, M.; URSAKI, V. V.; PAVLIDIS, D.; POPA, V.; TIGINYANU, I. M. (ELSEVIER, 2010)
    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1×1017cm−3 and 1×1018cm−3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified ...
  • Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications 
    BRANISTE, T.; CIERS, Joachim; MONAICO, Ed.; MARTIN, D.; CARLIN, J.-F.; URSAKI, V. V.; SERGENTU, V. V.; TIGINYANU, I. M.; GRANDJEAN, N. (ELSEVIER, 2017)
    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) ...
  • Multiphonon resonant Raman scattering in ZnO crystals and nanostructured layers 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; RUSU, E. V.; EMELCHENKO, G. A.; MASALOV, V. M.; SAMAROV, E. N. (American Physical Society, 2004)
    Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk ZnO crystals and layers, including nanostructured and highly conductive films, excited by 351.1 and 363.8 nm laser lines in the temperature ...
  • Nanofibrous-like ZnO layers deposited by magnetron sputtering and their integration in dye-sensitized solar cells 
    LUPAN, O.; GUERIN, V. M.; GHIMPU, L.; TIGINYANU, I. M.; PAUPORTE, T. (ELSEVIER, 2012)
    We present a cost-effective and fast fabrication of nanofibrous ZnO layers by the magnetron sputtering method. The as-prepared layers were characterized by scanning electron microscopy, energy dispersive X-ray spectrometry, ...
  • Nanoindentation of ZnSnO/Si thin films prepared by aerosol spray pyrolysis 
    MORARI, V.; PYRTSAC, C.; CURMEI, N.; GRABCO, D.; RUSU, E. V.; URSACHI, V. V.; TIGINYANU, I. M. (Publishing House of the Romanian Academy, 2021)
    Thin ZnSnO films with different thickness deposited on Si substrates by aerosol spray pyrolysis were investigated by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD), ...
  • Nanoperforated and Continuous Ultra-Thin GaN Membranes 
    TIGINYANU, I. M.; POPA, V.; STEVENS-KALCEFF, M. A. (The Electrochemical Society, 2011)
    We report on fabrication of ultra-thin GaN membranes of nanometer scale thickness, by using the concept of surface charge lithography based on low-energy ion treatment of the sample surface with subsequent photoelectrochemical ...
  • Nanostructured indium phosphide used in electrowetting system for biosensor applications 
    SIRBU, L.; VODA, I.; ESINENCO, D.; MULLER, R.; VOICU, R.; DANILA, M.; GHIMPU, L.; TIGINYANU, I. M.; URSAKI, V. (IEEE, 2011)
    We demonstrated the fabrication of complex nanostructured InP membranes with porous compact packed structure that have been cut during electrochemical etching in the same anodic process. The membranes were filled with ...
  • Nanostructuring induced enhancement of radiation hardness in GaN epilayers 
    URSAKI, V. V.; TIGINYANU, I. M.; VOLCIUC, O.; POPA, V.; SKURATOV, V. A.; MORKOÇ, H. (American Institute of Physics, 2007)
    The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A ...
  • Non-Linear Raman Scattering in I-III2-VI4 Compounds 
    FOMIN, V. M.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    The paper presents an experimental substantiation of the theory (based on the optical vibration anharmonism) of non-linear Raman scattering (RS) in defective II-III2-VI4 compounds. In the transparency region of those ...
  • Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds 
    MANJÓN, F. J.; GOMIS, O.; RODRÍGUEZ-HERNÁNDEZ, P.; PÉREZ-GONZÁLEZ, E.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; FUENTES-CABRERA, M.; TIGINYANU, I. M.; URSAKI, V. V. (American Physical Society, 2010)
    A strong nonlinear pressure dependence of the optical absorption edge has been measured in defect chalcopyrites CdGa2Se4 and HgGa2Se4. The behavior is due to the nonlinear pressure dependence of the direct band-gap energy ...
  • Novel phosphors based on porous materials 
    TIGINYANU, I. M.; URSAKI, V. V.; SIRBU, L.; ENAKI, M.; MONAICO, E. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    Technological conditions have been developed for the preparation of nanocomposite phosphors based on porous InP, GaP and GaAs semiconductor as well as Al2O3 and TiO2 dielectric templates doped with rare earth and transition ...
  • Nucleation and growth of macro pores on (100) n-type Ge 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    The authors investigate the nucleation and growth of macro pores on n-type Ge in the dark and with back side illumination. We show that nucleation on Ge is strongly dependent on the surface defect structure and therefore ...
  • Observation of 0.4 eV electron trap in electron-irradiated InP:Fe single crystals 
    TIGINYANU, I. M.; PYSHNAYA, N. B.; CALIN, M. V.; URSAKI, V. V. (IEEE, 1994)
    There has been increasing attention focused on the investigation of the /spl ap/0.4 eV electron trap in indium phosphide. According to G. Hirt et. al. (1993), the defect corresponding to that trap plays a major role in the ...
  • Observation of crossing pores in anodically etched n-GaAs 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M. (American Institute of Physics, 2001)
    Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very ...
  • Observation of surface phonon mode in porous GaP 
    KARAVANSKII, V. A.; ANASTASSAKIS, Evangelos; RAPTIS, Y. S.; SOKOLOV, V. N.; TIGINYANU, I. M.; URSAKI, V. V. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1996)
    Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range ...
  • Optical and sensory properties of ZnO nanofibrous layers grown by magnetron sputtering 
    GHIMPU, L.; TIGINYANU, I. M.; URSAKI, V.; LUPAN, O.; CHOW, L.; RUDZEVICH, Y.; LIN, Y. (Institute of Electrical and Electronics Engineerings, IEEE, 2012)
    This paper presents optical and sensory properties of ZnO nanofirous layers grown by a cost-effective and fast fabrication method based on magnetron sputtering. The as-prepared nanofibrous layers show good conductive ...
  • Optical characterization of AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...

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