Investigation of electrical and photoelectrical properties of ITO-nSi structures

USATII, Iu.

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dc.contributor.author	USATII, Iu.
dc.date.accessioned	2019-10-18T10:48:36Z
dc.date.available	2019-10-18T10:48:36Z
dc.date.issued	2005
dc.identifier.citation	USATII, Iu. Investigation of electrical and photoelectrical properties of ITO-nSi structures. In: Microelectronics and Computer Science: proc. of the 4th intern. conf., September 15-17, 2005. Chişinău, 2005, vol. 1, pp. 82-86. ISBN 9975-66-038-X.	en_US
dc.identifier.isbn	9975-66-038-X
dc.identifier.uri	http://repository.utm.md/handle/5014/4838
dc.description.abstract	ITO-nSi solar cells have been obtained by deposition of ITO layers using spray pyrolisis technique onto the surface of nSi wafers with the area up to 48.6cm2. The study of current-voltage and capacitance-voltage characteristics indicates that they are abrupt SIS heterostructures with a tunnel transparent SiO2 insulator layer at the ITO-nSi interface. Solar cells with active area up to 48,6cm2 have been fabricated. Their quantum efficiency reaches 0,97 at λ=550nm. The viability of the developed technology was demonstrated by the fabrication of a number of PV modules composed from 36 solar cells with the output power of 15W.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	silicon	en_US
dc.subject	transparent conducting oxides	en_US
dc.subject	conducting oxides	en_US
dc.subject	oxides	en_US
dc.subject	solar cells	en_US
dc.title	Investigation of electrical and photoelectrical properties of ITO-nSi structures	en_US
dc.type	Article	en_US