Investigation of electrical and photoelectrical properties of ITO-nSi structures

Abstract

ITO-nSi solar cells have been obtained by deposition of ITO layers using spray pyrolisis technique onto the surface of nSi wafers with the area up to 48.6cm2. The study of current-voltage and capacitance-voltage characteristics indicates that they are abrupt SIS heterostructures with a tunnel transparent SiO2 insulator layer at the ITO-nSi interface. Solar cells with active area up to 48,6cm2 have been fabricated. Their quantum efficiency reaches 0,97 at λ=550nm. The viability of the developed technology was demonstrated by the fabrication of a number of PV modules composed from 36 solar cells with the output power of 15W.