Reliability and Mechanism of Radiation Degradation of Microeletronic Devices

SHISHIYANU, Teodor

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dc.contributor.author	SHISHIYANU, Teodor
dc.date.accessioned	2019-10-07T08:13:14Z
dc.date.available	2019-10-07T08:13:14Z
dc.date.issued	2013
dc.identifier.citation	SHISHIYANU, Teodor. Reliability and Mechanism of Radiation Degradation of Microeletronic Devices. In: ICNBME-2013. International Conference on Nanotechnologies and Biomedical Engineering. German-Moldovan Workshop on Novel Nanomaterials for Electronic, Photonic and Biomedical Applications: proc. of the 2th intern. conf., April 18-20, 2013. Chişinău, 2013, pp. 191-193. ISBN 978-9975-62-343-8.	en_US
dc.identifier.isbn	978-9975-62-343-8
dc.identifier.uri	http://repository.utm.md/handle/5014/4623
dc.description.abstract	This review pape is destinated to investigation the mechanism and radiation degradation of microelectroic devices whith p-n junction, including Space Solar Cells (SSC) on the base of Si, GaAs, InP, InGaP/GaAs by using publicated experimental results of NASDA Engineering Test Satellite – V (ETS-V), Solar Cell Monitor(SCM) and other results publicated in different papers, γ-radiation degradation of MOSdevises on the base of high-k dielectrics (ZrO2/Si and HfO2/Si).	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	reliability of microeletronic devices	en_US
dc.subject	microeletronic devices	en_US
dc.subject	fiabilitatea dispozitivelor microeletronice	en_US
dc.subject	dispozitive microeletronice	en_US
dc.title	Reliability and Mechanism of Radiation Degradation of Microeletronic Devices	en_US
dc.type	Article	en_US