Reliability and Mechanism of Radiation Degradation of Microeletronic Devices

Abstract

This review pape is destinated to investigation the mechanism and radiation degradation of microelectroic devices whith p-n junction, including Space Solar Cells (SSC) on the base of Si, GaAs, InP, InGaP/GaAs by using publicated experimental results of NASDA Engineering Test Satellite – V (ETS-V), Solar Cell Monitor(SCM) and other results publicated in different papers, γ-radiation degradation of MOSdevises on the base of high-k dielectrics (ZrO2/Si and HfO2/Si).