Porous vs. Magnetron RF Sputtering Of InP for Portable THz-TDS in Pharmaceutical and Medical Applications

SIRBU, L.; DANILA, M.; MULLER, R.; GHIMPU, L.; DOBLETBAEV, R.; DASCALU, T.; GRIGORE (SANDU), O.; SARUA, A.; URSAKI, V.

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Porous vs. Magnetron RF Sputtering Of InP for Portable THz-TDS in Pharmaceutical and Medical Applications

SIRBU, L.; DANILA, M.; MULLER, R.; GHIMPU, L.; DOBLETBAEV, R.; DASCALU, T.; GRIGORE (SANDU), O.; SARUA, A.; URSAKI, V.

URI: http://repository.utm.md/handle/5014/4618

Date: 2013

Abstract:

We developed a combination of technology for deposition contacts/wires upon nanoporous InP thin film structures and RF sputtering InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50–100oC), under constant argon pressure (6.3•10-3Bar) and RF power (100 W).

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