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Influence of Metal Deposition on Electrochemical Impedance Spectra of Porous GaP and GaN Semiconductors

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dc.contributor.author ANICAI, Liana
dc.contributor.author GOLGOVICI, Florentina
dc.contributor.author MONAICO, Eduard
dc.contributor.author URSAKI, Veaceslav
dc.contributor.author PRODANA, Mariana
dc.contributor.author ENACHESCU, Marius
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2019-07-05T10:12:42Z
dc.date.available 2019-07-05T10:12:42Z
dc.date.issued 2017
dc.identifier.citation ANICAI, Liana, GOLGOVICI, Florentina, MONAICO, Eduard et al. Influence of Metal Deposition on Electrochemical Impedance Spectra of Porous GaP and GaN Semiconductors. In: Microelectronics and Computer Science: proc. of the 9th intern. conf., October 19-21, 2017. Chişinău, 2017, pp. 60-64. ISBN 978-9975-4264-8-0. en_US
dc.identifier.isbn 978-9975-4264-8-0
dc.identifier.uri http://repository.utm.md/handle/5014/3244
dc.description.abstract A comparative analysis of electrochemical impedance spectroscopy (EIS) characterization is performed in porous GaN and GaP templates with and without metal nanostructured layers deposited by pulsed electroplating. The porous semiconductor templates are produced by electrochemical etching of bulk substrates. The EIS data are interpreted in terms of electrical equivalent circuits (EECs) deduced by fitting the experimental data from Nyquist plots. It is found that the EIS data of porous electrodes without electroplating are best fitted with EECs with both the charge transfer and mass transfer components of the Faradaic impedance, while electroplating reduces the importance of the mass transport component, i. e. of the Warburg impedance, associated with diffusion, in favor of the charge transport phenomena. en_US
dc.language.iso en en_US
dc.publisher Technical University of Moldova en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject electroplating en_US
dc.subject electrochemical impedance spectroscopy en_US
dc.subject mass transfer en_US
dc.subject impedanță electrochimică en_US
dc.subject semiconductoare en_US
dc.subject galvanizare en_US
dc.subject spectroscopie de impedanță electrochimică en_US
dc.subject transfer de masă en_US
dc.title Influence of Metal Deposition on Electrochemical Impedance Spectra of Porous GaP and GaN Semiconductors en_US
dc.type Article en_US


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Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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