NIKA, D. L.; POKATILOV, E. P.; FOMIN, V. M.; DEVREESE, J. T.
(Technical University of Moldova, 2005)
For the heterostructures AlxGa1-x N/GaN/AlxGa1-x N with different thicknesses of the GaN quantum wells and AlxGa1-xN barriers, we use an exciton model, which includes the interaction of an electron and a hole with deformations ...