About the properties of the heterostructure based on the nano scale layers (In2O3 + 5%Sn) - p – Si at the change of the gas environment

Abstract

In this work the properties of the heterostructure (In2O3+5%Sn ) -p-Si with the mass thickness of the nano scale layer about 18 nm at the change of the gas environment from the laboratory atmosphere to the saturated vapor of the etyl alcohol were studied. It is shown that the current - voltage characteristics in the gas environment change the parameters at the replace the gas of laboratory environment to the saturated vapor of the etyl alcohol. The change of the current -voltage characteristics parameters at the change of the gas environment depend from the change of the potential barrier height of the heterojunction and from the change of voltage drop on the adsorptive-active nano scale In2O3+5%Sn. The change of the potential barrier height of the heterostructure and redistribution of the voltage drop between the adsorptive-active nano scaled layer and the space charge region of the silicon substrate is determined by the change of the charges volume which are in the layer were established.