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AUltrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decadeero-TiO2 prepared on the basis of networks of ZnO tetrapods

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dc.contributor.author CIOBANU, Vladimir
dc.contributor.author URSAKI, Veaceslav V.
dc.contributor.author LEHMANN, Sebastian
dc.contributor.author BRANISTE, Tudor
dc.contributor.author RAEVSCHI, Simion
dc.contributor.author ZALAMAI, Victor V.
dc.contributor.author MONAICO, Eduard V.
dc.contributor.author COLPO, Pascal
dc.contributor.author NIELSCH, Kornelius
dc.contributor.author TIGINYANU, Ion M.
dc.date.accessioned 2025-02-19T05:41:33Z
dc.date.available 2025-02-19T05:41:33Z
dc.date.issued 2022
dc.identifier.citation CIOBANU, Vladimir; Veaceslav V. URSAKI; Sebastian LEHMANN; Tudor BRANISTE; Simion RAEVSCHI; Victor V. ZALAMAI; Eduard V. MONAICO; Pascal COLPO; Kornelius NIELSCH and Ion M. TIGINYANU. Aero-TiO2 prepared on the basis of networks of ZnO tetrapods. Crystals. 2022, vol. 12, nr. 12, art. nr. 1753. ISSN 2073-4352. en_US
dc.identifier.issn 2073-4352
dc.identifier.uri https://doi.org/10.3390/cryst12121753
dc.identifier.uri https://repository.utm.md/handle/5014/29675
dc.description.abstract In this paper, new aeromaterials are proposed on the basis of titania thin films deposited using atomic layer deposition (ALD) on a sacrificial network of ZnO microtetrapods. The technology consists of two technological steps applied after ALD, namely, thermal treatment at different temperatures and etching of the sacrificial template. Two procedures are applied for etching, one of which is wet etching in a citric acid aqua solution, while the other one is etching in a hydride vapor phase epitaxy (HVPE) system with HCl and hydrogen chemicals. The morphology, composition, and crystal structure of the produced aeromaterials are investigated depending on the temperature of annealing and the sequence of the technological steps. The performed photoluminescence analysis suggests that the developed aeromaterials are potential candidates for photocatalytic applications. en_US
dc.language.iso en en_US
dc.publisher Multidisciplinary Digital Publishing Institute (MDPI) en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject atomic layer deposition en_US
dc.subject titania en_US
dc.subject anatase en_US
dc.subject rutile en_US
dc.subject spinel en_US
dc.subject zinc titanate en_US
dc.subject sacrificial template en_US
dc.subject annealing en_US
dc.subject luminescence en_US
dc.title AUltrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decadeero-TiO2 prepared on the basis of networks of ZnO tetrapods en_US
dc.type Article en_US


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