Hybrid metal-semiconductor structures based on InP and GaAs nanotemplates for electronic and photonic applications

Abstract

In this scientific work are presented the results that contribute to solving an important scientific problem related to obtaining of porous templates with controlled morphology and design by replacing acidic and alkaline electrolytes, the use of which presents a danger for the environment, with neutral electrolyte (NaCl) as well as obtaining of the metal-semiconductor hybrid structures using pulsed electrodeposition that offers additional possibilities to control the localized deposition in certain portions of the porous template and allows the controlled fabrication of nanodots, nanowires, nanotubes and perforated metal nanomembranes. Mechanisms of pore propagation in InP and GaAs semiconductor substrates and electrochemical deposition of metals in the produced porous templates are identified and discussed, which allowed to control the direction of pore growth, including those parallel to the substrate surface as well as localized Au deposition.