High resolution semiconductor switch

dc.contributor.author	STAMOV, I.
dc.contributor.author	SÎRBU, N.
dc.contributor.author	DOROGAN, A.
dc.date.accessioned	2022-05-26T08:46:44Z
dc.date.available	2022-05-26T08:46:44Z
dc.date.issued	2019
dc.identifier.citation	STAMOV, I., SÎRBU, N., DOROGAN, A. High resolution semiconductor switch. In: European Exhibition of Creativity and Innovation: proc. of the 11th ed. EUROINVENT, Iasi, Romania, 2019, p. 175. ISSN 2601-4564. e-ISSN 2601-4572.	en_US
dc.identifier.issn	2601-4564
dc.identifier.issn	2601-4572
dc.identifier.uri	http://repository.utm.md/handle/5014/20424
dc.description	Pending patent registration. Exibits Clasification: 5. Industrial and laboratory equipments,10. Information Technology and Communication.	en_US
dc.description.abstract	The active layer of the high resolution semiconductor switch is based on single crystal compound Ag3AsS3 placed between metal electrodes.	en_US
dc.language	en
dc.publisher	Romanian Inventors Forum	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	invenţii	en_US
dc.subject	inventions	en_US
dc.subject	semiconductor switches	en_US
dc.subject	crystal compounds	en_US
dc.subject	electronic scales	en_US
dc.title	High resolution semiconductor switch	en_US
dc.type	Article	en_US