High resolution semiconductor switch

STAMOV, I.; SÎRBU, N.; DOROGAN, A.
URI: http://repository.utm.md/handle/5014/20424
Date: 2019

Abstract:

The active layer of the high resolution semiconductor switch is based on single crystal compound Ag3AsS3 placed between metal electrodes.

Description:

Pending patent registration. Exibits Clasification: 5. Industrial and laboratory equipments,10. Information Technology and Communication.

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  • 2019
    Proceedings of the 11th Edition of European Exhibition of Creativity and Innovation, Romania
Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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