The deposition process of ZnO films doped with Eu and functionalized with Pd

LUPAN, Cristian; TROFIM, Viorel

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dc.contributor.author	LUPAN, Cristian
dc.contributor.author	TROFIM, Viorel
dc.date.accessioned	2022-05-25T07:25:32Z
dc.date.available	2022-05-25T07:25:32Z
dc.date.issued	2020
dc.identifier.citation	LUPAN, Cristian, TROFIM, Viorel. The deposition process of ZnO films doped with Eu and functionalized with Pd. In: European Exhibition of Creativity and Innovation: proc. of the 12th ed. EUROINVENT, Iasi, Romania, 2020, p. 164. ISSN 2601-4564. e-ISSN 2601-4572.	en_US
dc.identifier.issn	2601-4564
dc.identifier.issn	2601-4572
dc.identifier.uri	http://repository.utm.md/handle/5014/20398
dc.description	Patent application entry no. 1974, 2019. . Exibits Clasification: 12. Safety, protection and rescue of people.	en_US
dc.description.abstract	The invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=Igas/Iair =1.3 for 100 ppm H2 gas at room temperature and S= Igas/Iair =118 at operating temperature of 250 oC.	en_US
dc.language	en
dc.publisher	Romanian Inventors Forum	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	invenţii	en_US
dc.subject	inventions	en_US
dc.subject	semiconductor oxide films	en_US
dc.subject	thermal annealing	en_US
dc.subject	gas sensors	en_US
dc.title	The deposition process of ZnO films doped with Eu and functionalized with Pd	en_US
dc.type	Article	en_US