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The deposition process of ZnO films doped with Eu and functionalized with Pd

The deposition process of ZnO films doped with Eu and functionalized with Pd

LUPAN, Cristian; TROFIM, Viorel
URI: http://repository.utm.md/handle/5014/20398
Date: 2020

Abstract:

The invention relates to the technology for deposition of semiconductor oxide films, in particular to the process of obtaining of ZnO:Eu3+ films, with application of rapid thermal annealing (T=650 °C, t=60s), with can be applied to the manufacture of gas sensors obtaining sensibility S=Igas/Iair =1.3 for 100 ppm H2 gas at room temperature and S= Igas/Iair =118 at operating temperature of 250 oC.

Description:

Patent application entry no. 1974, 2019. . Exibits Clasification: 12. Safety, protection and rescue of people.

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  • 2020
    Proceedings of the 12 th Edition of European Exhibition of Creativity and Innovation, Romania
Attribution-NonCommercial-NoDerivs 3.0 United States Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States

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