Browsing EUROINVENT by Author "TIGINYANU, Ion"

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  • IR photodetector based on the GaAs nanowire 
    MONAICO, Eduard; URSAKI, Veaceslav; MONAICO, Elena; TIGINYANU, Ion (Romanian Inventors Forum, 2021)
    Herein, we propose the manufacture of IR photodetector based on GaAs nanowire with good sensitivity and dynamic characteristics prepared by a cost-effective electrochemical etching of GaAs wafer, which does not require ...
  • Large-Sized Nanocrystalline Ultrathin β-Ga2O 3Membranes Fabricated by Surface Charge Lithography 
    CIOBANU, Vladimir; JIN, Irina; BRANISTE, Tudor; TIGINYANU, Ion (Romanian Inventors Forum, 2022)
    Large-sized 2D semiconductor materials have gained significant attention for their fascinating properties in various applications. In this work, we demonstrate the fabrication of nanoperforated ultrathin β-Ga2O3 membranes ...
  • Process for fabrication of magnetic nanostructures 
    MONAICO, Eduard; URSAKI, Veaceslav; MORARI, Vadim; TIGINYANU, Ion (Romanian Inventors Forum, 2023)
    The invention refers to the technology for fabrication of nanostructured materials, especially to methods of magnetic nanostructures obtaining, which can be used in microelectronics, spintronics or data storage.
  • Process for independent pore networks obtaining in semiconductor wafers 
    MONAICO, Eduard; URSAKI, Veaceslav; TIGINYANU, Ion (Romanian Inventors Forum, 2022)
    The invention relates to the technology for the production of nanostructured materials, in particular to processes for obtaining of semiconductor nanostructures by electrochemical etching, which can be used in microfluidics ...
  • Process for obtaining of semiconductor nanowires in one step via anodization 
    MONAICO, Elena; MONAICO, Eduard; URSAKI, Veaceslav; TIGINYANU, Ion (Romanian Inventors Forum, 2021)
    Herein, we propose the technological route via electrochemical etching of bulk GaAs, GaP, and InP substrates for obtaining of a network of semiconductor nanowires with a diameter in the range of 50 - 500 nm, the nanowires ...
  • Process for wide bandgap semiconductor nanowires obtaining on narrow bandgap semiconductor substrate 
    MONAICO, Elena; MONAICO, Eduard; URSAKI, Veaceslav; TIGINYANU, Ion (Romanian Inventors Forum, 2022)
    Herein, we propose the manufacture of wide bandgap (Eg) semiconductor nanowires on narrow bandgap semiconductor support with good thermal conductivity, and the diameter of the nanowires varies in the range from 50 nm to 500 nm.
  • Two-step cost-effective electrochemical technology for the preparation of free-standing perforated Au nanomembranes 
    MONAICO, Eduard; MONAICO, Elena; URSAKI, Veaceslav; TIGINYANU, Ion (Romanian Inventors Forum, 2020)
    Herein, we propose a room-temperature two-step cost effective electrochemical technology for the preparation of free-standing Au nanomembranes. A thin Au film with thickness less than 100 nm was deposited by pulsed ...

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