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Optoelectronic properties of gallium nitride thin membranes

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dc.contributor.author BRANISTE, Tudor
dc.contributor.author POPA, Veaceslav
dc.contributor.author VOLCIUC, Olesea
dc.contributor.author TIGINYANU, Ion
dc.date.accessioned 2022-05-13T07:52:44Z
dc.date.available 2022-05-13T07:52:44Z
dc.date.issued 2015
dc.identifier.citation BRANISTE, Tudor, POPA, Veaceslav, VOLCIUC, Olesea et al. Optoelectronic properties of gallium nitride thin membranes. In: 11th International Conference on Optics “Micro- to Nano-Photonics IV”, ROMOPTO 2015, 1-4 Sept, 2015, Bucharest, Romania, 2015. en_US
dc.identifier.uri http://repository.utm.md/handle/5014/20267
dc.description.abstract We present the results of a systematic study of persistent photoconductivity (PPC) generated by UV-excitation in thin membranes based on crystalline GaN. The PPC was found to be optically quenched under extrinsic excitation (quanta energy lower than Eg). Interesting optoelectronic phenomena have been evidenced in nanoperforated GaN membranes. In particular, nanoperforation-induced optical quenching of PPC was found to occur at temperatures T < 100 K under intense intrinsic excitation. The obtained results are discussed taking into account strong surface localization of charge carriers in GaN thin membranes as well as UV-induced reactions occurring at surface states under intense intrinsic excitation. en_US
dc.language.iso en en_US
dc.publisher Romanian Academy en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject photoconductivity en_US
dc.subject thin membranes en_US
dc.subject membranes en_US
dc.subject nanoperforated membranes en_US
dc.subject gallium nitride membranes en_US
dc.title Optoelectronic properties of gallium nitride thin membranes en_US
dc.type Article en_US


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