UV radiation sensors with unitary and binary superficial barrier

DOROGAN, Valerian; VIERU, Tatiana; KOSYAK, V.; DAMASKIN, I.; CHIRITA, F.

dc.contributor.author	DOROGAN, Valerian
dc.contributor.author	VIERU, Tatiana
dc.contributor.author	KOSYAK, V.
dc.contributor.author	DAMASKIN, I.
dc.contributor.author	CHIRITA, F.
dc.date.accessioned	2022-04-21T11:49:54Z
dc.date.available	2022-04-21T11:49:54Z
dc.date.issued	1998
dc.identifier.citation	DOROGAN, Valerian, VIERU, Tatiana, KOSYAK, V. et al. UV radiation sensors with unitary and binary superficial barrier. In: Fifth Conference on Optics: proc. ROMOPTO '97, 9-12 Sept., 1997, Bucharest, Romania, 1998, V. 3405, p. 1007-1012.	en_US
dc.identifier.uri	https://doi.org/10.1117/12.312705
dc.identifier.uri	http://repository.utm.md/handle/5014/20198
dc.description	Acces full text: https://doi.org/10.1117/12.312705	en_US
dc.description.abstract	UV radiation sensors with unitary and binary superficial barrier, made on the basis of GaP - SnO2 and GaAs - AlGaAs - SnO2 heterostructures, are presented in the paper. Technological and constructive factors, which permit to realize a high conversion efficiency and to exclude the influence of visible spectrum upon the photoanswer, are analyzed. It was established that the presence of an isotypical superficial potential barrier permits to suppress the photoanswer component formed by absorption of visible and infrared radiation in semiconductor structure bulk.	en_US
dc.language.iso	en	en_US
dc.publisher	SPIE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	UV radiation sensors	en_US
dc.subject	photoanswers	en_US
dc.subject	visible radiation	en_US
dc.subject	infrared radiation	en_US
dc.title	UV radiation sensors with unitary and binary superficial barrier	en_US
dc.type	Article	en_US