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Multilayer porous structures on GaN for the fabrication of Bragg reflectors

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dc.contributor.author BRANISTE, Tudor
dc.contributor.author MONAICO, Eduard
dc.contributor.author MARTIN, Denis
dc.contributor.author CARLIN, Jean-François
dc.contributor.author POPA, Veaceslav
dc.contributor.author URSAKI, Veaceslav V.
dc.contributor.author GRANDJEAN, Nicolas
dc.contributor.author TIGINYANU, Ion M.
dc.date.accessioned 2022-04-21T09:45:31Z
dc.date.available 2022-04-21T09:45:31Z
dc.date.issued 2017
dc.identifier.citation BRANISTE, Tudor, MONAICO, Eduard, MARTIN, Denis et al. Multilayer porous structures on GaN for the fabrication of Bragg reflectors. In: Nanotechnology 8. 2017. –V. 10248, pp. 83-89. en_US
dc.identifier.uri https://doi.org/10.1117/12.2266280
dc.identifier.uri http://repository.utm.md/handle/5014/20195
dc.description Access full text - https://doi.org/10.1117/12.2266280 en_US
dc.description.abstract We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy (HVPE). The formation of MPS during anodization is caused by the spatial modulation of the electrical conductivity throughout the surface and the volume of the HVPE-grown GaN substrate, which occurs according to a previously proposed model involving generation of pits and their overgrowth. We found that the topology of the porous sheets constituting the MPS is different in the vicinity of N-face and Ga-face of the bulk wafer, it being of conical shape near the N-face and of hemispherical shape near the Ga-face. The composition of electrolytes, their concentration as well as the anodization potential applied during electrochemical etching are among technological parameters optimized for designing MPS suitable for Bragg reflector applications. It is shown also that regions with various porosities can be produced in depth of the sample by changing the anodization potential during the electrochemical etching. en_US
dc.language.iso en en_US
dc.publisher SPIE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject multilayer porous structures en_US
dc.subject porous structures en_US
dc.subject electrochemical etching en_US
dc.subject Bragg reflectors en_US
dc.subject hydride vapor phase epitaxy en_US
dc.title Multilayer porous structures on GaN for the fabrication of Bragg reflectors en_US
dc.type Article en_US


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