Internal quantum efficiency enhancement of InGaN/GaN LEDs with Mg-Si pin-doped GaN quantum barrier

KÜPPERS, F.; SIRKELI, V. P.; YILMAZOGLU, O.; AL-DAFFAIE, S.; OPREA, I.; ONG, D. S.; HARTNAGEL, H. L.

dc.contributor.author	KÜPPERS, F.
dc.contributor.author	SIRKELI, V. P.
dc.contributor.author	YILMAZOGLU, O.
dc.contributor.author	AL-DAFFAIE, S.
dc.contributor.author	OPREA, I.
dc.contributor.author	ONG, D. S.
dc.contributor.author	HARTNAGEL, H. L.
dc.date.accessioned	2021-09-29T08:58:21Z
dc.date.available	2021-09-29T08:58:21Z
dc.date.issued	2018
dc.identifier.citation	KÜPPERS, F., SIRKELI, V. P., YILMAZOGLU, O. et al. Internal quantum efficiency enhancement of InGaN/GaN LEDs with Mg-Si pin-doped GaN quantum barrier. In: Materials Science and Condensed Matter Physics: proc. Ediția 9, 25-28 septembrie 2018, Chişinău, Republica Moldova, 2018, pp. 203.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/17500
dc.description.abstract	In this work we study numerically the effect of Mg-Si pindoping of GaN quantum barrier within InGaN/GaN multi quantum wells (MQWs) on the internal quantum efficiency (IQE) of LEDs in comparison with LED devices with undoped, Si(Mg)-doped or Si(Mg) delta-doped GaN barriers.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Fizică Aplicată al AŞM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	light-emitting diodes	en_US
dc.subject	diodes	en_US
dc.subject	LED	en_US
dc.subject	indium gallium nitride	en_US
dc.title	Internal quantum efficiency enhancement of InGaN/GaN LEDs with Mg-Si pin-doped GaN quantum barrier	en_US
dc.type	Article	en_US