Photoelectrical properties and the stability at radiation for monocrystals ZNIN2S4

ARAMA, Efim; GHEORGHITA, Eugeniu; PINTEA, Valentina; MACIUGA, Anatol

dc.contributor.author	ARAMA, Efim
dc.contributor.author	GHEORGHITA, Eugeniu
dc.contributor.author	PINTEA, Valentina
dc.contributor.author	MACIUGA, Anatol
dc.date.accessioned	2021-09-01T09:29:17Z
dc.date.available	2021-09-01T09:29:17Z
dc.date.issued	2015
dc.identifier.citation	ARAMA, Efim, GHEORGHITA, Eugeniu, PINTEA, Valentina et al. Photoelectrical properties and the stability at radiation for monocrystals ZNIN2S4. In: Professional Education and Economic Needs of the Black Sea Region: mater conf. 24 aprilie 2015, Chişinău, Moldova. 2015, pp. 134-139. ISBN 978-9975-75-786-7.	en_US
dc.identifier.isbn	978-9975-75-786-7
dc.identifier.uri	http://repository.utm.md/handle/5014/16850
dc.description.abstract	This study presents the results of investigations on the conductivity and irradiation stability of single crystals 2 4 ZnIn S14 in a wide range of incident electron energies ( 30÷75 keV) and the respective doses (10 14÷10 20 cm-2). It considers the possibilities to manufacture accelerated electron detectors and assesses their parameters. Considering that the energy values of the order are near the threshold of structural defects of intensive formation, the influence of this phenomenon on the detector parameters is subject to the analysis.	en_US
dc.language.iso	en	en_US
dc.publisher	Academia de Studii Economice din Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	monocrystals	en_US
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.subject	irradiation conductivity	en_US
dc.subject	electron beams	en_US
dc.subject	irradiation stability	en_US
dc.subject	binary semiconductors	en_US
dc.subject	semiconductors	en_US
dc.title	Photoelectrical properties and the stability at radiation for monocrystals ZNIN2S4	en_US
dc.type	Article	en_US