Sensing properties of tellurium based thin films to propylamine and carbon oxide

TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.

dc.contributor.author	TSIULYANU, D.
dc.contributor.author	MARIAN, S.
dc.contributor.author	LIESS, H.-D.
dc.date.accessioned	2021-03-18T15:08:13Z
dc.date.available	2021-03-18T15:08:13Z
dc.date.issued	2002
dc.identifier.citation	TSIULYANU, D., MARIAN, S., LIESS, H.-D. Sensing properties of tellurium based thin films to propylamine and carbon oxide. In: Sensors and Actuators B: Chemical. 2002, V. 85, N. 3, pp. 232-238. ISSN 0925-4005.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0925-4005(02)00113-2
dc.identifier.uri	http://repository.utm.md/handle/5014/13902
dc.description	Access full text - https://doi.org/10.1016/S0925-4005(02)00113-2	en_US
dc.description.abstract	The effect of propylamine (C3H7NH2) and carbon oxide on electrical conductivity of tellurium based thin films has been investigated. It is shown that the absorption of the propylamine vapor leads to reversible increase of the resistance of the layer, while the absorption of CO vapor decreases the resistance. The sensitivity as well as the response and recovery time depend on the gas concentration. Comparative characterization of the sensitivity to different gases and discussion are given.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gas sensors	en_US
dc.subject	chalcogenide semiconductors	en_US
dc.subject	semiconductors	en_US
dc.subject	propylamine	en_US
dc.subject	carbon oxide	en_US
dc.title	Sensing properties of tellurium based thin films to propylamine and carbon oxide	en_US
dc.type	Article	en_US