Sensing properties of tellurium based films to propylamine

TSIULYANU, D.; MARIAN, S.; MIRON, V.; LIESS, H.-D.

dc.contributor.author	TSIULYANU, D.
dc.contributor.author	MARIAN, S.
dc.contributor.author	MIRON, V.
dc.contributor.author	LIESS, H.-D.
dc.date.accessioned	2021-03-18T13:30:41Z
dc.date.available	2021-03-18T13:30:41Z
dc.date.issued	2001
dc.identifier.citation	TSIULYANU, D., MARIAN, S., MIRON, V. et al. Sensing properties of tellurium based films to propylamine. In: International Semiconductor Conference: Proceedings CAS-2001, 9-13 Oct. 2001, Sinaia, Romania, 2001, V. 2, pp. 287-290. IEEE Cat. No. 01TH8547. ISBN: 0-7803-6666-2.	en_US
dc.identifier.isbn	0-7803-6666-2
dc.identifier.uri	https://doi.org/10.1109/SMICND.2001.967466
dc.identifier.uri	http://repository.utm.md/handle/5014/13900
dc.description	Access full text: https://doi.org/10.1109/SMICND.2001.967466	en_US
dc.description.abstract	The effect of propylamine (C/sub 3/H/sub 7/NH/sub 2/) on electrical conductivity of tellurium based thin films has been investigated. It is shown that the absorption of the propylamine vapor leads to reversible increase of resistance of the layer. The sensitivity as well as response and recovery times depends on the gas concentration. The structural characterization of the films and discussion are given.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	tellurium	en_US
dc.subject	semiconductor materials	en_US
dc.subject	semiconductor thin films	en_US
dc.subject	thin films	en_US
dc.subject	films	en_US
dc.subject	gas sensors	en_US
dc.subject	sensors	en_US
dc.subject	electrical conductivity	en_US
dc.subject	crystals	en_US
dc.title	Sensing properties of tellurium based films to propylamine	en_US
dc.type	Article	en_US