Formation of gap edges and shift of Fermi level in As2S3 - based glass alloys with addition of germanium

ANDRIESH, A. M.; TSIULYANU, D. I.

dc.contributor.author	ANDRIESH, A. M.
dc.contributor.author	TSIULYANU, D. I.
dc.date.accessioned	2021-01-22T12:00:36Z
dc.date.available	2021-01-22T12:00:36Z
dc.date.issued	1987
dc.identifier.citation	ANDRIESH, A. M., TSIULYANU, D. I. Formation of gap edges and shift of Fermi level in As2S3 - based glass alloys with addition of germanium. In: Journal of Non-Crystalline Solids. 1983, V. 97-98, pp. 1135-1138. ISSN 0022-3093.	en_US
dc.identifier.uri	https://doi.org/10.1016/0022-3093(87)90272-9
dc.identifier.uri	http://repository.utm.md/handle/5014/12543
dc.description	Access full text - https://doi.org/10.1016/0022-3093(87)90272-9	en_US
dc.description.abstract	The gap formation with the composition change is studied on the basis of complex analysis of the experimental results obtained by investigation of optical absorption and conductivity of both As2S3 Ge glassy materials and heterostructures with crystalline silicon as their basis. It is shown that the gap of the above materials narrows with germanium concentration increase due to shifts of the valence band top. The stationary Fermi level shifts in this case relatively both edges of the allowed bands but it appears to be more fastened to the valence band edge.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gaps	en_US
dc.subject	glassy materials	en_US
dc.subject	crystalline silicon	en_US
dc.title	Formation of gap edges and shift of Fermi level in As2S3 - based glass alloys with addition of germanium	en_US
dc.type	Article	en_US