The impact of process optimization on planar THz-Schottky device reliability

MOTTET, B.; SYDLO, C.; KOGEL, B.; ROBILLARD DE, Q.; COJOCARI, O.; HARTNAGEL, H. L.

dc.contributor.author	MOTTET, B.
dc.contributor.author	SYDLO, C.
dc.contributor.author	KOGEL, B.
dc.contributor.author	ROBILLARD DE, Q.
dc.contributor.author	COJOCARI, O.
dc.contributor.author	HARTNAGEL, H. L.
dc.date.accessioned	2021-01-20T15:22:12Z
dc.date.available	2021-01-20T15:22:12Z
dc.date.issued	2004
dc.identifier.citation	MOTTET, B., SYDLO, C., KOGEL, B. et al. The impact of process optimization on planar THz-Schottky device reliability. In: IEEE International Reliability Physics Symposium: proceedings, 25-29 April 2004, Phoenix, AZ, USA, p. 575-576. ISBN 0-7803-8315-X.	en_US
dc.identifier.isbn	0-7803-8315-X
dc.identifier.uri	https://doi.org/10.1109/RELPHY.2004.1315396
dc.identifier.uri	http://repository.utm.md/handle/5014/12514
dc.description	Acces full text: https://doi.org/10.1109/RELPHY.2004.1315396	en_US
dc.description.abstract	The technological complexity as well as space-application quality standards require sophisticated process control and optimization for reliability improvement of planar THz-Schottky devices. Degradation mechanisms are initiated using, the Transmission Line Pulse (TLP)-method and monitored as a function of the number of applied pulses. The degradation analysis is performed by IV-measurements on the one side and by Transmission electron microscopy (TEM) on the other side.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	space applications	en_US
dc.subject	Schottky devices	en_US
dc.subject	degradation mechanisms	en_US
dc.title	The impact of process optimization on planar THz-Schottky device reliability	en_US
dc.type	Article	en_US