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Process Control and Failure Analysis Implementation for THz Schottky-based components

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dc.contributor.author ICHIZLI, V.
dc.contributor.author RODRÍGUEZ-GIRONÉS, M.
dc.contributor.author MARCHAND, L.
dc.contributor.author GARDEN, C.
dc.contributor.author COJOCARI, O.
dc.contributor.author MOTTET, B.
dc.contributor.author HARTNAGEL, H. L.
dc.date.accessioned 2021-01-19T08:07:39Z
dc.date.available 2021-01-19T08:07:39Z
dc.date.issued 2002
dc.identifier.citation ICHIZLI, V., RODRÍGUEZ-GIRONES, M., MARCHAND, L. et al. Process Control and Failure Analysis Implementation for THz Schottky-based components. In: Microelectronics Reliability. 2002, V. 42, Iss. 9, pp. 58006. ISSN 0026-2714. en_US
dc.identifier.uri https://doi.org/10.1016/S0026-2714(02)00196-8
dc.identifier.uri http://repository.utm.md/handle/5014/12486
dc.description Access full text - https://doi.org/10.1016/S0026-2714(02)00196-8 en_US
dc.description.abstract Schottky diodes and integrated circuits are most used devices for both frequency mixing and multiplying in THz range. Higher operational frequencies require of the devise dimensions. Devise dimensions in THz range are often comparable and are even below one micron, which increases the importance of reliability issues of Schottky diodes. Due to the enhanced sophisticated fabrication process, especially in the case of planar devices and integrated circuits, many failure mechanisms of high-frequency semiconductor devices can be directly traced to the failures in the fabrication process. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject Schottky diodes en_US
dc.subject semiconductor devices en_US
dc.subject integrated circuits en_US
dc.title Process Control and Failure Analysis Implementation for THz Schottky-based components en_US
dc.type Article en_US


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