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Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition

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dc.contributor.author PURICA, M.
dc.contributor.author BUDIANU, E.
dc.contributor.author RUSU, E.
dc.contributor.author DANILA, M.
dc.contributor.author GAVRILA, R.
dc.date.accessioned 2021-01-14T10:32:32Z
dc.date.available 2021-01-14T10:32:32Z
dc.date.issued 1998
dc.identifier.citation PURICA, M., BUDIANU, E., RUSU, E. et al. Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition. In: International Semiconductor Conference: proceedings . CAS 2000, 10-14 Oct. 2000, Sinaia, Romania, V. 1, pp. 159-162, Cat. No. 00TH8486. en_US
dc.identifier.uri https://doi.org/10.1109/SMICND.2000.890210
dc.identifier.uri http://repository.utm.md/handle/5014/12438
dc.description Acces full text: https://doi.org/10.1109/SMICND.2000.890210 en_US
dc.description.abstract Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C/sub 5/H/sub 7/O/sub 2/)/sub 2/ as Zn source. The deposited thin ZnO layers of /spl sim/0,1 /spl mu/m thickness on Si and InP semiconductor substrates have been investigated with respect to crystalline phase by X-ray diffraction (XRD), by AFM for surface morphology, spectrophotometric measurements in UV-VIS-NIR spectral range and optoelectrical measurements of ZnO/semiconductor heterostructures. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thin films en_US
dc.subject films en_US
dc.subject vapor depositions en_US
dc.subject depositions en_US
dc.subject semiconductors en_US
dc.subject heterostructures en_US
dc.title Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition en_US
dc.type Article en_US


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