Heterojunction with ZnO polycrystalline thin films for optoelectronic devices applications

PURICA, Munizer; BUDIANU, Elena; RUSU, Emil

dc.contributor.author	PURICA, Munizer
dc.contributor.author	BUDIANU, Elena
dc.contributor.author	RUSU, Emil
dc.date.accessioned	2021-01-12T17:49:24Z
dc.date.available	2021-01-12T17:49:24Z
dc.date.issued	2000
dc.identifier.citation	PURICA, Munizer, BUDIANU, Elena, RUSU, Emil et al. Heterojunction with ZnO polycrystalline thin films for optoelectronic devices applications. In: Microelectronic Engineering, 2000, V. 51-52, pp. 425-431. ISSN 0167-9317.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0167-9317(99)00492-X
dc.identifier.uri	http://repository.utm.md/handle/5014/12419
dc.description	Access full text – https://doi.org/10.1016/S0167-9317(99)00492-X	en_US
dc.description.abstract	Thin films of ZnO were deposited by thermal decomposition of Zn(C5H7O2)2 on semiconductor substrate, n-type silicon, p-type InP and also on transparent glass substrate. The obtained ZnO/Si and ZnO/InP heterostructures were investigated for optical properties by spectrophotometry and surface morphology by AFM. The measured values of optoelectrical parameters in the visible spectral range and the lateral photovoltage characteristics demonstrate the possibility of using ZnO/n-Si and ZnO/p-InP heterojunctions for photodetection and photovoltaic devices applications.	en_US
dc.language.iso	en	en_US
dc.publisher	Elservier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	polycrystalline films	en_US
dc.subject	films	en_US
dc.subject	heterojunctions	en_US
dc.subject	photodetection devices	en_US
dc.title	Heterojunction with ZnO polycrystalline thin films for optoelectronic devices applications	en_US
dc.type	Article	en_US