Coordinate sensitive photodetectors based on InGaAs/InP heterostructures

BUDEANU, E.; GROZESCU, I.; PURICA, M.; RUSU, E.; SLOBODCHIKOV, S. V.

dc.contributor.author	BUDEANU, E.
dc.contributor.author	GROZESCU, I.
dc.contributor.author	PURICA, M.
dc.contributor.author	RUSU, E.
dc.contributor.author	SLOBODCHIKOV, S. V.
dc.date.accessioned	2021-01-12T16:25:49Z
dc.date.available	2021-01-12T16:25:49Z
dc.date.issued	2000
dc.identifier.citation	BUDEANU, E., GROZESCU, I., PURICA M. et al. Coordinate sensitive photodetectors based on InGaAs/InP heterostructures. In: Third International EuroConference on Advanced Semiconductor Devices and Microsystems: proceedings ASDAM 2000, 16-18 Oct. 2000, Smolenice, Slovakia, 2000, pp. 403-406.	en_US
dc.identifier.uri	https://doi.org/10.1109/ASDAM.2000.889531
dc.identifier.uri	http://repository.utm.md/handle/5014/12416
dc.description	Acces full text: https://doi.org/10.1109/ASDAM.2000.889531	en_US
dc.description.abstract	The dependence of the longitudinal photo-e.m.f. in In/sub 0.53/Ga/sub 0.47/As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V/sub phl/=f(x) has been observed and the V/sub phl/ temperature dependence in the 100-300 K range is determined by the carrier mobility change. A quadrant p-i-n photodiode based on an InP/InGaAs/InP heterostructure was fabricated and its electrical characteristics studied. The photodetector shows wide spectral characteristics (0.9-1.7 /spl mu/m) with a responsivity of each element of 0.62 A/W and a slope of the inversion characteristics of K=(0.8-1.0) 10/sup 3/ V/W.mm.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	photodiodes	en_US
dc.subject	photodetectors	en_US
dc.subject	heterostructures	en_US
dc.title	Coordinate sensitive photodetectors based on InGaAs/InP heterostructures	en_US
dc.type	Article	en_US