dc.contributor.author | SYRBU, N. N. | |
dc.contributor.author | STAMOV, I. G. | |
dc.contributor.author | ZALAMAI, V. V. | |
dc.contributor.author | DOROGAN, A. | |
dc.date.accessioned | 2020-12-29T09:46:02Z | |
dc.date.available | 2020-12-29T09:46:02Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | SYRBU, N. N., STAMOV, I. G., ZALAMAI, V. V. et al. Excitonic polaritons of zinc diarsenide single crystals. In: Physica B: Condensed Matter, 2017, V. 506, pp. 183-191. ISSN 0921-4526. | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.physb.2016.11.022 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12332 | |
dc.description | Access full text – https://doi.org/10.1016/j.physb.2016.11.022 | en_US |
dc.description.abstract | Excitonic polaritons of ZnAs2 single crystals had been investigated. Parameters of singlet excitons with Г2¯(z) symmetry and orthoexcitons 2Г1¯(y)+Г2¯(x) had been determined. Spectral dependencies of ordinary and extraordinary dispersion of refractive index had been calculated using interferential reflection and transmittance spectra. It was shown, that A excitonic series were due to hole (V1) and electron (C1) bands. The values of effective masses of electrons (mc*=0.10m0) and holes (mv1*=0.89m0) had been estimated. It was revealed that the hole mass mv1* changes from 1.03m0 to 0.55m0 at temperature increasing from 10K up to 230K and that the electron mass mc* does not depend on temperature. The integral absorption A (eVcm−1) of the states n=1, 2 and 3 of Г2¯(z) excitons depends on the An≈n−3 equality, which it is characteristic for S-type excitonic functions. Temperature dependences of the integral absorption of ground states for Г2¯(z) and Г2¯(х) excitons differ. The ground states of B and C excitons formed by V3 – C1 and V4 – C1 bands and its parameters had been determined. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elservier | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | semiconductors | en_US |
dc.subject | exciton-polaritons | en_US |
dc.subject | reflection spectra | en_US |
dc.subject | transmission spectra | en_US |
dc.subject | spectra | en_US |
dc.subject | excitonic levels | en_US |
dc.subject | excitons | en_US |
dc.subject | polaritons | en_US |
dc.title | Excitonic polaritons of zinc diarsenide single crystals | en_US |
dc.type | Article | en_US |
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