Open-loop-control of pore formation in semiconductor etching

CLAUSSEN, J. C.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; LANGA, S.; FOLL, H.

dc.contributor.author	CLAUSSEN, J. C.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	LANGA, S.
dc.contributor.author	FOLL, H.
dc.date.accessioned	2020-11-25T11:22:17Z
dc.date.available	2020-11-25T11:22:17Z
dc.date.issued	2003
dc.identifier.citation	CLAUSSEN, J. C., CARSTENSEN, J., CHRISTOPHERSEN, M. et al. Open-loop-control of pore formation in semiconductor etching. In: IEEE International Workshop on Workload Characterization: proseedings, 20-22 Aug. 2003, Saint Petersburg, Russia, 2003, V. 3, pp. 895-900. ISBN 0-7803-7939-X.	en_US
dc.identifier.isbn	0-7803-7939-X
dc.identifier.uri	https://doi.org/10.1109/PHYCON.2003.1237020
dc.identifier.uri	http://repository.utm.md/handle/5014/11747
dc.description	Acces full text: https://doi.org/10.1109/PHYCON.2003.1237020	en_US
dc.description.abstract	Electrochemical etching of semiconductors gives rise to a wide variety of self-organized structures including fractal structures, regular and branching pores. The Current-Burst Model and the Aging Concept are considered to describe the dynamical behavior governing the structure formation. Here the suppression of side-branching during pore growth is demonstrated by an open-loop-control method, resulting in pores with oscillating diameter.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	electrochemical etching	en_US
dc.subject	semiconductors	en_US
dc.subject	self-organized structures	en_US
dc.subject	fractal structures	en_US
dc.subject	pores	en_US
dc.title	Open-loop-control of pore formation in semiconductor etching	en_US
dc.type	Article	en_US