Photoluminescence Study of Nitrogen-Related States in ZnSe

IVANOVA, Galina N.; NEDEOGLO, Dmitrii D.; NEDEOGLO, Natalia D.; RUSU, Emil V.; SIRKELI, Vadim P.; STRATAN, Gheorghe I.; URSAKI, Veacheslav V.

dc.contributor.author	IVANOVA, Galina N.
dc.contributor.author	NEDEOGLO, Dmitrii D.
dc.contributor.author	NEDEOGLO, Natalia D.
dc.contributor.author	RUSU, Emil V.
dc.contributor.author	SIRKELI, Vadim P.
dc.contributor.author	STRATAN, Gheorghe I.
dc.contributor.author	URSAKI, Veacheslav V.
dc.date.accessioned	2020-11-20T08:16:35Z
dc.date.available	2020-11-20T08:16:35Z
dc.date.issued	2007
dc.identifier.citation	IVANOVA, Galina N., NEDEOGLO, Dmitrii D., NEDEOGLO, Natalia D. et al. Photoluminescence Study of Nitrogen-Related States in ZnSe. In: AIP Conference Proceedings, 2007, V. 893, Nr. 1, pp. 279-280. ISSN 0094243X, 15517616.	en_US
dc.identifier.uri	https://doi.org/10.1063/1.2729876
dc.identifier.uri	http://repository.utm.md/handle/5014/11593
dc.description	Access full text - https://doi.org/10.1063/1.2729876	en_US
dc.description.abstract	Photoluminescence of N-doped ZnSe crystals is studied at temperatures between 10 and 300 K. Doping with N leads to the formation of simple N-based donor and acceptor defects, as well as associative N-based acceptors. The nature and the structure of N-based luminescence centres and the mechanisms of radiative recombination are discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	AIP Publishing LLC	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	crystals	en_US
dc.subject	photoluminescence	en_US
dc.subject	luminescence	en_US
dc.title	Photoluminescence Study of Nitrogen-Related States in ZnSe	en_US
dc.type	Article	en_US